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Photo—Conductive Amorphous Silicon Carbide Prepared by Intermediate Species SiF2 and Cf4 Mixture

Published online by Cambridge University Press:  28 February 2011

Hideki Matsumura ,
Takashi Uesugi  and
Hisanori Ihara
Hideki Matsumura
Affiliation:
Department of Physical Electronics, Hiroshima University, Saijo, Higashi—Hiroshima 724, Japan
Takashi Uesugi
Affiliation:
Department of Physical Electronics, Hiroshima University, Saijo, Higashi—Hiroshima 724, Japan
Hisanori Ihara
Affiliation:
Department of Physical Electronics, Hiroshima University, Saijo, Higashi—Hiroshima 724, Japan
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Abstract

A new type of hydro—fluorinated amorphous silicon—carbide (a-SiC:F:H) is produced by the glow discharge decomposition of gas mixture of CF4, H2 and intermediate species SiF2. The electrical, optical and structural properties of this a—SiC:F:H are studied and the results are compared with the similar results for a—SiC:F:H produced from gas mixture of CH4, H2 and SiF2 and also for hydrogenated amorphous silicon carbide (a—SiC:H) produced from CH4 and SiH4 gas mixture. It is found that the optical band gap can be increased without degradation of photo—conductive properties only when amorphous silicon carbide is produced from CF4, H2 and SiF2 gas mixture.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 175
Copyright
Copyright © Materials Research Society 1985

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