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Phase Analysis for Single Crystalline Silicon Scratched by Spherical Diamond TIP

Published online by Cambridge University Press:  17 March 2011

Seong-Min Jeong ,
Han-Seog Oh ,
Sung-Eun Park ,
Hyun-Ho Kim  and
Hong-Lim Lee
Seong-Min Jeong
Affiliation:
Department of Ceramic Engineering, Yonsei University 134 Shinchon-Dong, Seodaemoon-Gu, Seoul, 120-749, Korea On leave from MEMC Korea. Co.
Han-Seog Oh
Affiliation:
Department of Ceramic Engineering, Yonsei University 134 Shinchon-Dong, Seodaemoon-Gu, Seoul, 120-749, Korea On leave from MEMC Korea. Co.
Sung-Eun Park
Affiliation:
Department of Ceramic Engineering, Yonsei University 134 Shinchon-Dong, Seodaemoon-Gu, Seoul, 120-749, Korea On leave from MEMC Korea. Co.
Hyun-Ho Kim
Affiliation:
Department of Ceramic Engineering, Yonsei University 134 Shinchon-Dong, Seodaemoon-Gu, Seoul, 120-749, Korea On leave from MEMC Korea. Co.
Hong-Lim Lee
Affiliation:
Department of Ceramic Engineering, Yonsei University 134 Shinchon-Dong, Seodaemoon-Gu, Seoul, 120-749, Korea On leave from MEMC Korea. Co.
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Abstract

The mechanical properties of silicon crystals are important from the viewpoint of wafer and device fabrication processes. It is now widely recognized that silicon undergoes a series of phase transformations when subjected to high pressures, using conventional high pressure devices, such as diamond anvils or hydrostatic pressure cells, or under indentation. Scratching on a silicon surface in the various conditions introduces various kinds of mechanical damage and stressed states. Micro-Raman spectroscopy was used to observe the phase transition of single crystal silicon. Several different phases were observed depending on scratching speed and scratched locations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 697: Symposium P – Surface Engineering 2001--Fundamentals and Applications , January 2001 , P8.5
Copyright
Copyright © Materials Research Society 2002

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References

1. Clarke, D. R., Kirchener, M. C., Cook, R. F., and Hockey, B. J., Amorphization and conductivity of silicon and germanium induced by indentation, Phys. Rev. Lett. 1988, 60(21): 2156.Google Scholar
2. Needs, R. J. and Mujica, A., First-principles pseudopotential study of the structural phases of silicon, Phys. Rev. B, 1995, 51(15):9652–9660.Google Scholar
3. Williams, J. S., Chen, Y., Wong-Leung, J., Kerr, A. and Swain, M. V., Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters, J. Mater. Res., 1999, 14 (6):2338–2343.Google Scholar
4. Leung, T.P., Lee, W.B. and Lu, X.M., Diamound turning of silion substrates in ductile-regime, Journal of Materials Processing Technology, 1998, 73:42–48.Google Scholar
5. George, A., in Properties of Crystalline Silicon, edited by Hull, R. (INSPEC, The Institution of Electrical Engineers London United Kingdom 1999), p. 104.Google Scholar
6. Kaoler, A.. Gogotsi, Y.G. and Nickel, K.G., Phase transformations of silicon caused by contact loading, J. Appl. Phys. 1997, 81(7):3057–3063 Google Scholar