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Persistent Photoconductivity in High-mobility AlxGa1−xN/AlN/GaN Heterostructures Grown by Metal-organic Vapor-phase Epitaxy

Published online by Cambridge University Press:  01 February 2011

Necmi Biyikli ,
Umit Ozgur ,
Xianfeng Ni ,
Yi Fu ,
Hadis Morkoc  and
Cagliyan Kurdak
Necmi Biyikli
Affiliation:
[email protected], Virginia Commonwealth University, Electrical & Computer Engineering, 601 W. Main St., Richmond, VA, 23284, United States
Umit Ozgur
Affiliation:
[email protected], Virginia Commonwealth University, Electrical & Computer Engineering, 601 W. Main St., Richmond, VA, 23284, United States
Xianfeng Ni
Affiliation:
[email protected], Virginia Commonwealth University, Electrical & Computer Engineering, 601 W. Main St., Richmond, VA, 23284, United States
Yi Fu
Affiliation:
[email protected], Virginia Commonwealth University, Electrical & Computer Engineering, 601 W. Main St., Richmond, VA, 23284, United States
Hadis Morkoc
Affiliation:
[email protected], Virginia Commonwealth University, Electrical & Computer Engineering, 601 W. Main St., Richmond, VA, 23284, United States
Cagliyan Kurdak
Affiliation:
[email protected], University of Michigan, Physics, Ann Arbor, MI, 48109, United States
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Abstract

We report on the persistent photoconductivity (PPC) effect in AlxGa1−xN/AlN/GaN heterostructures with two different Al compositions (x=0.15 and 0.25). The two-dimensional electron gas (2DEG) was characterized by Shubnikov-de Haas and Hall measurements. At cryogenic temperatures under optical illumination, the 2DEG carrier density and mobility was enhanced. The persistent photocurrent in both samples exhibited a strong dependence on illumination wavelength.

Keywords

photoconductivitymagnetoresistance (transport)epitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-28
Copyright
Copyright © Materials Research Society 2007

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References

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