Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-28T21:09:32.636Z Has data issue: false hasContentIssue false
  • English
  • Français

Periodic Alignment of Silicon Dot Fabricated by Linearly Polarized Nd:YAG Pulse Laser

Published online by Cambridge University Press:  01 February 2011

Kensuke Nishioka  and
Susumu Horita
Kensuke Nishioka
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, Materials Science, 1-1 Asahidai, Nomi, N/A, 923-1292, Japan, +81-761-51-1562, +81-761-51-1149
Susumu Horita
Affiliation:
[email protected], Japan Advanced Institute of Science and Technology, Graduate School of Materials Science, Nomi, Ishikawa, 923-1292, Japan
Get access

Abstract

Periodically aligned submicron Si dots were fabricated by only irradiating linearly polarized Nd:YAG pulse laser to the amorphous silicon (a-Si) thin film deposited on silicon dioxide (SiO2) film. Interference between the incident beam and the scattered surface wave leads to the spatial periodicity of beam energy density distribution on the surface of the irradiated samples. The a-Si thin film was melted by laser beam, and then, the molten thin Si film was split and condensed due to its surface tensile according to the periodic energy density distribution. The polycrystalline Si (poly-Si) fine lines were formed periodically. After the first irradiation, the sample was rotated by 90o, and the laser beam was irradiated. The periodic energy density distribution was generated on the Si fine lines. Then, the lines were split off and condensed according to the periodic energy density distribution, and the periodically aligned submicron Si dots were fabricated on the SiO2 film.

Keywords

Silasernanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A15-03
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Maracas, G. N., Harris, G. L., Lee, C. A. and McFarlane, R. A., Appl. Phys Lett. 33, 453 (1978).Google Scholar
2. Leamy, H. J., Rozgonyi, G. A., Sheng, T. T. and Celler, G. K., Appl. Phys. Lett. 32, 535 (1978).Google Scholar
3. Oron, M. and Sɸrensen, G., Appl. Phys. Lett. 35, 782 (1979).Google Scholar
4. Young, J. F., Sipe, J. E., Preston, J. S. and Driel, H. M. van, Appl. Phys. Lett. 41, 261 (1982).Google Scholar
5. Siegrist, M., Kaech, G. and Kneubühl, F. K., Appl. Phys. 2, 45 (1973).Google Scholar
6. Isenor, N. R., Appl. Phys. Lett. 31, 148 (1977).Google Scholar
7. Jain, A. K., Kulkarni, V. N., Sood, D. K. and Uppal, J. S., J. Appl. Phys. 52, 4882 (1981).Google Scholar
8. Dyer, P. E. and Farley, R. J., Appl. Phys. Lett. 57, 765 (1990).Google Scholar
9. Wang, Y., Natsui, T., Makita, Y., Kumano, A. and Takeuchi, Y., IEICE Trans. Electron. E83–C, 1553 (2000).Google Scholar
10. Fork, D. K., Anderson, G. B., Boyce, J. B., Johnson, R. I. and Mei, P., Appl. Phys. Lett. 68, 2138 (1996).Google Scholar