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Performance of ZnO TFTs with AlN as Insulator

Published online by Cambridge University Press:  01 February 2011

Maria Merlyne De Souza ,
Richard B Cross ,
Suhas Jejurikar  and
K P Adhi
Maria Merlyne De Souza
Affiliation:
[email protected], University of Sheffield, EE department, Mappin Street,, Sheffield, S13JD, United Kingdom, 44-114-2225854, 44-114-2225143
Richard B Cross
Affiliation:
[email protected], De Montfort University, Emerging Technologies Research Centre, Gateway Street,, Leicester, LE1 9BH, United Kingdom
Suhas Jejurikar
Affiliation:
[email protected], University of Pune, Department of Physics, Pune, 411007, India
K P Adhi
Affiliation:
[email protected], University of Pune, Department of Physics, Pune, 411007, India
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Abstract

The performance of ZnO TFTs fabricated via RF sputtering, with Aluminium Nitride (AlN) as the underlying insulator are reported. The surface roughness of ZnO with AlN is lower than that with SiN by at least 5 times, and that with SiO2 by 30 times. The resulting mobility for the three insulators AlN, SiN, SiO2 using identical process is found to be 3, 0.2-0.7 and 0.1-0.25 cm2/Vs respectively. There does not appear to be any corresponding improvement in the stability of the AlN devices. The devices demonstrate significant positive threshold voltage shift with positive gate bias and negative threshold voltage shift with negative gate bias. The underlying cause is surmised to be ultra-fast interface states in combination with bulk traps in the ZnO.

Keywords

displayII-VItransparent conductor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1035: Symposium L – Zinc Oxide and Related Materials–2007 , 2007 , 1035-L12-12
Copyright
Copyright © Materials Research Society 2008

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