Hostname: page-component-669899f699-tzmfd Total loading time: 0 Render date: 2025-04-27T01:36:21.551Z Has data issue: false hasContentIssue false
  • English
  • Français

Patterned Structures of Silicon Nanocrystals Prepared by Pulsed Laser Interference Crystallization of Ultra-Thin A-Si:H Single-Layer

Published online by Cambridge University Press:  11 February 2011

Xiaowei Wang ,
Feng Qiao ,
Leyi Zhu ,
Wei Li ,
Jian Li ,
Xinfan Huang  and
Kunji Chen
Xiaowei Wang
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
Feng Qiao
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
Leyi Zhu
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
Wei Li
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
Jian Li
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
Xinfan Huang
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
Kunji Chen
Affiliation:
National Laboratory of Solid State Microstructures and, Department of Physics Nanjing University, Nanjing 210093, China
Get access

Abstract

We employ the method of phase-modulated KrF excimer pulsed laser interference crystallization to fabricate nanometer-sized crystalline silicon (nc-Si) with the two-dimensional (2D) patterned distribution within the ultra-thin a-Si:H single-layer. The local crystallization occurs after interference laser irradiation under proper energy density. The results of atomic force microscopy, Raman scattering spectroscopy, cross-section transmission electron microscopy and scanning electron microscopy demonstrate that Si nano-crystallites are formed within the initial a-Si:H single-layer, selectively located in the discal regions with the diameter of 350 nm and patterned with the same 2D periodicity of 2.0 μm as the phase-shifting grating. The results show that the present method can be used to fabricate patterned nc-Si films for device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.24
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

Canham, L.T., Appl. Phys. Lett. 57 (1990) 1046 Google Scholar
2. Tsybeskov, L., Hirschman, K.D., Duttagupta, S.P., Zacharias, M., Fauchet, P.M., Mccaffrey, J.P. and Lockwood, D.J., Appl. Phys. lett 72 (1998), 43 Google Scholar
3. Gu, X., Qin, H., Lu, H., Chen, K., Huang, X., J. Non-Cryst. Solids 227 (1996) 1168 Google Scholar
4. Chen, K.J., Huang, X.F., Xu, J., Feng, D., Appl. Phys. Lett. 61 (1992) 2069 Google Scholar
5. Banin, U., Cao, Y.W., Katz, D., Millo, O., Nature 400 (1999) 542 Google Scholar
6. Yoffe, A.D., Advanced in Physics 50 (2001) 1 Google Scholar
7. Wakayama, Y., Tagami, T., Tanaka, S., Thin Solid Films, 350 (1999) 300 Google Scholar
8. Striemer, C.C., Krishnan, R. and Fauchet, P.M., Nano. Lett. 1(2001) 643 Google Scholar
9. Dahlheimer, B., Karrer, U., Nebel, C.E., Stutzmanm, M., J. Non-Cryst. Solids 227–230(1998)Google Scholar
10. Heintze, M., Santos, P.V., Nebel, C.E., Stutzmanm, M., Appl. Phys. Lett. 64 (1994) 3148 Google Scholar
11. Nebel, C.E., Mat. Res. Soc. Symp, Proc. Vol. 420 (1996) 117 Google Scholar
12. Chen, K.J., Luo, G.P., Wang, M.X., Gao, X., etc. J. Non-Cryst. Solids 227–230 (1998) 934 Google Scholar
13. Huang, X.F., Li, Z.F., Liu, Z.G., Chen, K.J., J. Non-Cryst. Solids 198–200 (1996) 821 Google Scholar
14. Huang, X.F., Wang, L., Li, J., etc. J. Non-Cryst. Solids 266–269 (2000) 1015 Google Scholar
15. Jiang, M., Wang, M.X., Chen, K.J., Chinese Journal of Lasers B8 (1999) 142 Google Scholar
16. Chen, G.X., Chen, K.J., Zhang, X.K., Phys. Status. Solidi., A 129 (1992) 421 Google Scholar
17. Wang, L., Li, J., Huang, X.F., Li, W., Chen, K.J., Appl. Surf. Science 165 (2000) 85 Google Scholar