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Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

Published online by Cambridge University Press:  01 February 2011

Antonella Poggi ,
Francesco Moscatelli ,
Sandro Solmi  and
Roberta Nipoti
Antonella Poggi
Affiliation:
[email protected], CNR-IMM, Bologna, Bologna, Italy
Francesco Moscatelli
Affiliation:
[email protected], CNR-IMM, Bologna, Bologna, Italy
Sandro Solmi
Affiliation:
[email protected], CNR-IMM, Bologna, Bologna, Italy
Roberta Nipoti
Affiliation:
[email protected], CNR-IMM, Bologna, Bologna, Italy
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Abstract

This study compares p-MOS capacitors fabricated on N+ implanted and on virgin 4H-SiC. The former sample have N at the SiO2/SiC interface, the latter have not. To investigate the presence of deep and shallow hole traps at the SiO2/SiC interface, high frequency and quasi-static capacitance voltage measurements under dark have been compared for bias sweeping from accumulation to depletion and from depletion to accumulation, the latter after white light illumination. The presence of N has an effect on the density of the shallow donor like traps but none effect on the deep ones. The positive charge trapped in the oxide and/or at the oxide interface after equivalent tunneling hole injection have been compared and are equivalent. Time dependent dielectric breakdown tests have been compared too. The oxide grown on N+implanted SiC broken at lower electric field.

Keywords

oxideelectrical propertiesN
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B09-01
Copyright
Copyright © Materials Research Society 2010

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