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Oxygen Doped Silicon Surface Layers by Ion Implantation

Published online by Cambridge University Press:  21 February 2011

K. Srikanth  and
S. Ashok
K. Srikanth
Affiliation:
Department of Engineering Science & Mechanics and Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
S. Ashok
Affiliation:
Department of Engineering Science & Mechanics and Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
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Abstract

Oxygen doping of silicon with ion implantation has been attempted with the aim of modifying the surface electrical properties of the substrate. The change in currentvoltage (I–V) characteristics after 1200 °C anneal has been ascribed to the formation of Oxygen Doped Silicon. The independence of the I–V characteristics on the choice of top metal contact and the reversal in direction of rectification strongly suggest the formation of an alloy layer in Si by the implantation. SIMS measurements indicate a sharp oxygen profile after the anneal and FTIR data show that oxygen is in the form of SiO2 embedded in a silicon matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 247
Copyright
Copyright © Materials Research Society 1989

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