Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-12-01T01:27:02.352Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxidation Resistance of TaSiN Diffusion Barriers for Stacked Capacitors

Published online by Cambridge University Press:  21 March 2011

F. Letendu ,
M.C. Hugon ,
B. Agius ,
I Vickridge ,
F. Ayguavives  and
A.I. Kingon
F. Letendu
Affiliation:
LCFIO, bat 503, Université Paris Sud, 91405 Orsay cedex, France
M.C. Hugon
Affiliation:
LCFIO, bat 503, Université Paris Sud, 91405 Orsay cedex, France
B. Agius
Affiliation:
LCFIO, bat 503, Université Paris Sud, 91405 Orsay cedex, France
I Vickridge
Affiliation:
GPS, Tour 23, Université Paris 6 et 7, 75251 Paris, France
F. Ayguavives
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC, USA
A.I. Kingon
Affiliation:
Dept. of Materials Science and Engineering, North Carolina State University, Raleigh, NC, USA
Get access

Abstract

Due to its resistance to oxidation, TaSiN is a promising candidate as an electrically conductive barrier layer for integration of high permittivity oxides in advanced memory devices. In this study we report on the properties and the resistance to oxidation of TaSiN thin films deposited by reactive magnetron sputtering and processed by rapid thermal annealing (RTA) in 18O2 at 650°C. In order to determine the composition, RBS (Rutherford Backscattering Spectroscopy) and NRA (Nuclear Reaction Analysis) techniques have been used. 18O depth profile concentrations were measured after RTA using the narrow (fwhm=100eV) resonance at 151 keV in the nuclear reaction 18O(p,α)15N.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC2.2.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

(1)

Present address: LPGP, bat 210, Université Paris sud, 91405 Orsay, France

References

1 Grill, A., Jahnes, C. and Cabral, C. Jr, J. Mater. Res. 14 (4), 1604 (1999).10.1557/JMR.1999.0215Google Scholar
2 Hara, T., Tanaka, M., Sakiyama, K., Onishi, S., Ishihara, K. and Kudo, J., Jpn. J. Appl. Phys. 36, 893 (1997).10.1143/JJAP.36.L893Google Scholar
3 Cabral, C. Jr, Saenger, K.L., Kotecki, D. E., Harper, J. M. E., J.Mater. Res. 15 (1), 194 (2000).10.1557/JMR.2000.0031Google Scholar
4 Westwood, W. D., J. Vac. Technol. 15 (1), 1 (1978)10.1116/1.569429Google Scholar
5 Vickridge, I. and Amsel, G., Nucl. Instr. And Meth. In Phys. Res. B45, 6 (1996).Google Scholar
6 Ayguavives, F., Ea-Kim, B., Aubert, P., Agius, B. and Bretagne, J., Appl. Phys. Lett. 73 (8), 1023 (1998).10.1063/1.122072Google Scholar
6 Hugon, M.C., Desvignes, J.M., Agius, B., Vickridge, I, Kim, D.J. and Kingon, A.I., Nucl. Instr. And Meth. In Phys. Res. B 161–163, 578 (2000).10.1016/S0168-583X(99)00953-2Google Scholar