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Origins of Parasitic Emissions from 353 nm AlGaN-based UV LEDs over SiC Substrates

Published online by Cambridge University Press:  01 February 2011

Ji-Soo Park ,
Daryl W Fothergill ,
Patrick Wellenius ,
Seann M. Bishop ,
John F. Muth  and
Robert F. Davis
Ji-Soo Park
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, 1001 Capability Dr. Research Building One, Rm240, Raleigh, NC, 27695-7919, United States, (919) 515-1841, (919) 515-3419
Daryl W Fothergill
Affiliation:
[email protected], North Carolina State University, Electrical and Computer Engineering, United States
Patrick Wellenius
Affiliation:
[email protected], North Carolina State University, Electrical and Computer Engineering, United States
Seann M. Bishop
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, United States
John F. Muth
Affiliation:
[email protected], North Carolina State University, Electrical and Computer Engineering, United States
Robert F. Davis
Affiliation:
[email protected], North Carolina State University, Materials Science and Engineering, United States
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Abstract

The effects of p-GaN capping layers and p-type carrier-blocking layers on the occurrence of parasitic emissions from 353 nm AlGaN-based LEDs have been investigated. LEDs without a p-type Al0.25Ga0.75N carrier-blocking layer showed a shoulder peak at ∼370 nm due to electron overflow into the p-Al0.10Ga0.90N cladding layer and subsequent electron-hole recombination in the acceptor levels. Broad emission between 380 and 450 nm from LEDs having a p-GaN capping layer was caused by 420 nm luminescence from the p-GaN capping layer, which was optically pumped by 353 nm UV emission from the quantum wells. Broad, defect-related luminescence at ∼520 nm was emitted from the AlGaN layers within the quantum wells.

Keywords

optoelectronicchemical vapor deposition (CVD) (deposition)nitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF09-02
Copyright
Copyright © Materials Research Society 2006

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