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Origin of Imprint in Ferroelectric CSD SrBi2Ta2O9 Thin Films

Published online by Cambridge University Press:  10 February 2011

M. Grossmann ,
O. Lohse ,
D. Bolten ,
R. Waser ,
W. Hartner ,
G. Schindler ,
N. Nagel  and
C. Dehm
M. Grossmann
Affiliation:
IWE I1, RWTH Aachen University of Technology, D-52056, Germany
O. Lohse
Affiliation:
IWE I1, RWTH Aachen University of Technology, D-52056, Germany
D. Bolten
Affiliation:
IWE I1, RWTH Aachen University of Technology, D-52056, Germany
R. Waser
Affiliation:
IWE I1, RWTH Aachen University of Technology, D-52056, Germany IFF, Research Center Juelich, Germany
W. Hartner
Affiliation:
SIEMENS AG, Semiconductor Group, Dept. HL MP E TF, Germany
G. Schindler
Affiliation:
SIEMENS AG, Semiconductor Group, Dept. HL MP E TF, Germany
N. Nagel
Affiliation:
SIEMENS AG, Semiconductor Group, Dept. HL MP E TF, Germany
C. Dehm
Affiliation:
SIEMENS AG, Semiconductor Group, Dept. HL MP E TF, Germany
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Abstract

The imprint behavior of CSD processed SrBi2Ta2O9 (SBT) thin films has been investigated as a function of time, applied bias, illumination with band gap light and post anneal under different oxygen partial pressures. Applying a bias in the direction of the polarization enhances the tendency of the capacitor to exhibit a voltage shift as well as illuminating the poled capacitor with band gap light. Post anneal after top electrode deposition and patterning under slightly reducing atmospheres does not affect the imprint rate. From these experimental results, a model is presented which explains the imprint behavior of SBT films by transport of electronic charges from the electrodes into the film and subsequent trapping of these charges near the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 269
Copyright
Copyright © Materials Research Society 1999

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References

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