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Orientation Effects on the Heteroepitaxial Growth of CdxHg1−xTe on to CdTe and GaAs

Published online by Cambridge University Press:  25 February 2011

J Giess ,
J S Gough ,
S J C Irvine ,
J B Mullin  and
G W Blackmore
J Giess
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcs WR14 3PS, UK
J S Gough
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcs WR14 3PS, UK
S J C Irvine
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcs WR14 3PS, UK
J B Mullin
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcs WR14 3PS, UK
G W Blackmore
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcs WR14 3PS, UK
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Abstract

For MOVPE growth of CdTe on to (100) GaAs the orientation of the epitaxial layer is dependent on a combination of the growth conditions and substrate treatment prior to growth, (100) being the preferred orientation. (111) oriented CdTe layers can be grown on to (111) GaAs substrates. The effect of orientation on the choice of buffer composition, electrical properties and the extent of Ga diffusion from the substrate is discussed. Epitaxial CMT layers grown on to suitably buffered GaAs substrates are compared to similar layers grown on to CdTe substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 389
Copyright
Copyright © Materials Research Society 1987

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References

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