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Ordered Structures of Zn1−xFexSe Epilayers Grown on InP and GaAs Substrates

Published online by Cambridge University Press:  15 February 2011

K. Park ,
H.- Y. Wei ,
L. Salamanca-Riba  and
B. T. Jonker
K. Park
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742-2115
H.- Y. Wei
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742-2115
L. Salamanca-Riba
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742-2115
B. T. Jonker
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5320.
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Abstract

We present evidence for two types of ordered structures, CuAu-I and CuPt, in Zn1−xFexSe (x≈ 0.4) epilayers grown by molecular beam epitaxy. These ordered structures are observed in both electron diffraction patterns and cross-sectional high-resolution lattice images. The CuAu-I ordered structure occurs in Zn1−xFexSe epilayers grown on (001) InP substrates, while the CuPt-type occurs in epilayers grown on (001) GaAs substrates. The ordered structure of Zn1−xFexSe grown on InP substrates consists of alternating ZnSe and FeSe layers along the [001] growth direction and the [110] direction. In contrast, the ordered structure of Zn1−xFexSe grown on GaAs substrates consists of alternating ZnSe and FeSe layers along the < 111 > directions. We have also investigated the role of the misfit strain associated with the lattice mismatch between the epilayers and the substrates on the type of ordered structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 213
Copyright
Copyright © Materials Research Society 1993

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