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Optimized Nonreciprocal Rib Waveguides for Integrated Magneto-Optic Isolators

Published online by Cambridge University Press:  10 February 2011

M. Wallenhorst ,
V. Backherms ,
A. Josef ,
N. Bahlmann ,
M. Lohmeyer ,
H. Dötsch  and
P. Hertel
M. Wallenhorst
Affiliation:
University of Osnabrück, 49069 Osnabrück, Germany
V. Backherms
Affiliation:
University of Osnabrück, 49069 Osnabrück, Germany
A. Josef
Affiliation:
University of Osnabrück, 49069 Osnabrück, Germany
N. Bahlmann
Affiliation:
University of Osnabrück, 49069 Osnabrück, Germany
M. Lohmeyer
Affiliation:
University of Osnabrück, 49069 Osnabrück, Germany
H. Dötsch
Affiliation:
University of Osnabrück, 49069 Osnabrück, Germany
P. Hertel
Affiliation:
University of Osnabrück, 49069 Osnabrück, Germany
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Abstract

Garnet films of composition (Lu,Bi)3(Fe,Ga,Al)5O12 and (Tm,Bi)3(Fe,Ga)5O12 are grown by liquid-phase epitaxy on [111]-oriented substrates of gadolinium gallium garnet. Ferrimagnetic films with positive or negative Faraday-rotation as well as paramagnetic films with negligible Faraday-rotation are produced by variations of the rare earth ion substitutions. The temperature dependence of Faraday-rotation is fitted with a molecular field model. Optical rib waveguides in single and double layer garnet films with different Faraday-rotations are realized. The nonreciprocal phase shift of the TM0-Mode is studied both theoretically and experimentally at a wavelength of 1.3 μm. Results show that the maximum nonreciprocal effect at room temperature of double layer films with opposite Faraday-rotation is 1.6 times as large as that of comparable single layer waveguides. But, because of the large temperature dependence of the Faraday-rotation of the positive rotating films, these waveguides show a large temperature dependence of the nonreciprocal phase shift. This problem can be avoided if the positive rotating layer is replaced by a paramagnetic layer. Agreement between calculations and measurements is excellent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 517: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , January 1998 , 463
Copyright
Copyright © Materials Research Society 1998

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