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Optimization of Pulsed Annealing Techniques for GaAs Integrated Circuits

Published online by Cambridge University Press:  15 February 2011

G.M. Martin ,
A Mitonneau ,
M. Cathelin ,
S. Makram-Ebeid ,
C. Venger ,
D. Barbier  and
A. Laugier
G.M. Martin
Affiliation:
Laboratoires d'Electronique et de Physique Appliquee, 3, Avenue Descartes, 94450 Limeil-Brevannes (France),
A Mitonneau
Affiliation:
Laboratoires d'Electronique et de Physique Appliquee, 3, Avenue Descartes, 94450 Limeil-Brevannes (France),
M. Cathelin
Affiliation:
Laboratoires d'Electronique et de Physique Appliquee, 3, Avenue Descartes, 94450 Limeil-Brevannes (France),
S. Makram-Ebeid
Affiliation:
Laboratoires d'Electronique et de Physique Appliquee, 3, Avenue Descartes, 94450 Limeil-Brevannes (France),
C. Venger
Affiliation:
Laboratoires d'Electronique et de Physique Appliquee, 3, Avenue Descartes, 94450 Limeil-Brevannes (France),
D. Barbier
Affiliation:
L.P.M., INSA, 20 Avenue Albert Einstein, 69621 Villeurbanne (France)
A. Laugier
Affiliation:
L.P.M., INSA, 20 Avenue Albert Einstein, 69621 Villeurbanne (France)
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Abstract

Ohmic contacts on GaAs were realized by pulse annealing AuGe and AuGe-Ni layers deposited on top of n-type GaAs conducting layers. We used focused and largediameter YAG laser beam pulses (λ =1.06 µm), a large diameter Ruby laser beam pulse (λ = 0.69 µm) and a largediameter electron beam pulse. We tested the electrical quality of the contacts obtained. We also examined the compatibility of the alloying techniques used with theself-alignment technology for IC fabrication. In particular, we tested the quality of Al Schottky diodes and of the boron implanted insulating regions which coexist on the same IC with the ohmic contacts and are subject to the same pulse annealing treatment. The relative merit of the different pulse treatments are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 299
Copyright
Copyright © Materials Research Society 1981

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References

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