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Optical Property of Vanadium Oxide Nanotube Suspensions

Published online by Cambridge University Press:  01 February 2011

L. Q. Mai
Affiliation:
1 Key Laboratory of Silicate Materials Science and Engineering (WUT), Ministry of Education, Wuhan University of Technology, Wuhan 430070 Hubei, P. R. China
W. Chen*
Affiliation:
Institute of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 Hubei, P. R. China
H. Yu
Affiliation:
Institute of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 Hubei, P. R. China
Y. Y Qi
Affiliation:
Institute of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 Hubei, P. R. China
Y Dai
Affiliation:
Institute of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 Hubei, P. R. China
J. F. Peng
Affiliation:
Institute of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070 Hubei, P. R. China
*
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Abstract

Vanadium oxide nanotube dispersions were investigated in water suspensions and characterized by TEM, absorption spectroscopy and optical limiting testing. The results show that the nanotubes are unrolled and oxidized after 6-day aging, resulting in some change of optical limiting property at the two wavelengths (532 and 1064 nm). The 1.27-eV absorption band is assigned as a superposition of both V d→d and V4+→V5+ charge-transfer excitations, and the features at 2.9 eV are attributed to O 2p→V 3d charge-transfer excitations.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

REFERRENCE

1. Iijima, S., Nature. 354, 56 (1991).Google Scholar
2. Sun, X., Yu, R. Q., Xu, G. Q., Hor, T. S. A. and Ji, W., Appl. Phys. Lett. 73, 3632 (1998).Google Scholar
3. Nagashima, M. and Wada, H., Thin Solid Films 312, 61 (1998).Google Scholar
4. Zhang, J. G., McGraw, J. M., Turner, J. and Ginley, D., J. Electrochem. Soc. 145, 1630 (1997).Google Scholar
5. Manno, D., Serra, A. and Giulio, M. D., J. Appl. Phys. 81, 2709 (1997).Google Scholar
6. Xu, J. F., Czerw, R., Webster, S., Carroll, D. L., Ballato, J. and Nesper, R., Appl. Phys. Lett. 81, 1711 (2002).Google Scholar
7. Cao, J., Choi, J., Musfeldt, J. L., Lutta, S. and Whittingham, M. S., Chem. Mater. 16, 731 (2004).Google Scholar
8. Chen, W., Mai, L., Peng, J.,; Xu, Q. and Zhu, Q., J. Solid State Chem. 177, 377 (2004).Google Scholar
9. Webster, S., Czerw, R., Nesper, R., Di Maio, J., Xu, J.-F., Ballato, J. and Carrolla, D. L.. J. Nanosci. Nanotech. 4, 260(2004).Google Scholar
10. Souza Filho, A. G., Ferreira, O. P., Santos, E. J. G., Mendes Filho, J. and Alves, O. L., Nano Lett, 4, 2009(2004).Google Scholar
11. Mai, L.Q., Chen, W., Xu, Q., Zhu, Q. Y., Han, C.H. and Peng, J.F., Solid State Commun. 126, 541 (2003).Google Scholar
12. Long, V. C., Zhu, Z., Musfeldt, J. L., Wei, X., Koo, H. J., Whangbo, M. H., Jegoudez, J., Revcolevschi, A., Phys. Rev. B 60, 15721 (1999).Google Scholar
13. Presura, C., Van der Marel, D., Dischner, M., Geibel, C., Kremer, R. K., Phys. Rev. B 62, 16522 (2000)Google Scholar
14. Verleur, H. W., Barker, A. S. Jr, Berglund, C. N., Phys. Rev. 172, 788 (1968).Google Scholar
15. Shin, S., Suga, S., Taniguchi, M., Fujisawa, M., Kanzaki, H., Fujimori, A., Daimon, H., Ueda, Y., Kosuge, K., Kachi, S., Phys. Rev. B 41, 4993 (1990).Google Scholar
16. Choi, J., Musfeldt, J. L., Wang, Y. J., Koo, H.-J., Whangbo, M.-H., Galy, J., Millet, P., Chem. Mater, 14, 924 (2002).Google Scholar
17. Choi, J., Sanderson, L. A. W., Musfeldt, J. L., Ellern, A., Kögerler, P., Phys. Rev. B 68, 064412 (2003).Google Scholar
18. Sushkov, A. B., Musfeldt, J. L., Wei, X., Crooker, S. A., Jegoudez, J., Revcolevschi, A., Phys. Rev. B 66, 054439 (2002)Google Scholar