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Optical Properties of Silicon Nanoparticles in Silica Gel Monoliths

Published online by Cambridge University Press:  11 February 2011

Y. Posada
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, 00931 PR
L. San Miguel
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, 00931 PR
L. F. Fonseca
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, 00931 PR
O. Resto
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, 00931 PR
S. Z. Weisz
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, 00931 PR
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Abstract

We have synthesized highly photoluminescent monoliths by incorporating nanocrystalline Silicon (nc-Si) from Porous Silicon (PSi) into a Sol Gel Silica matrix. The optically transparent samples are the result of mixing an acid catalyzed solution of Sol-Gel and nc-Si that forms a solution of Si-nanoclusters (Si-n) that eventually after condensation for three days produces the final luminescent material. Photoluminescence (PL) basic studies show a very high orange emission band with a maximum peak that ranges between 600 nm and 750 nm. The PL emission intensity was increased up to ten times the luminescence of the native nano material PSi, the mechanical and thermal stability properties were also greatly improved. The PL corresponds to different concentrations or preparations of Sol-Gel with Si-n (Sol-Si) with a broad size distribution that produces orange and blue emissions, and for this reason we take as our future work to tailor samples with very high Si-n densities for semiconducting and photonic applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Cullis, A.G., Canham, L.T. and Calcott, P.D.J.. J. Appl. Phys, 82, 909 (1997).Google Scholar
[2]. Zhang, L., Coffer, J. L. and Zerda, T. W.. J. Sol-Gel Science and Technology, 11, 267 (1998).Google Scholar
[3]. Porous Silicon Science and Technology. Vial, Jean-Claude, Derrien, Jacques. ISBN 3–540–58936–8. p 33 (1995).Google Scholar
[4]. Buckley, A.M. and Greenblatt, M.. J. Chem. Edu, 71, 599(1994).Google Scholar
[5] Duval, D. J., McCoy, B. J., Risbud, S. H., and Munir, Z. A.. J of Appl. Phys., 83, 4 (1997).Google Scholar
[6] Linsmeier, J., Wüst, K., Schenk, H., Hipert, U., Ossau, W., Fricke, J. and ArensFischer, R.. Thin Solid Films, 297, 26 (1997).Google Scholar
[7]. Svrcek, V., Pelant, I., Rehspringer, J.-L., Gilliot, P., Ohlmann, D., Cregut, O., Honerlage, B., Chvojka, T., Valenta, J., Dian, J.. Material Science and Engineering, C 19, 233 (2002).Google Scholar
[8]. Delgado, G.R., Lee, Howard W. H., Kauzlarich, S. M. and Bley, R. A.. Mat. Res. Soc. Symp. Proc. 452, 177 (1997).Google Scholar
[9]. Fauchet, P. M.. J. Luminescence. 70, 294 (1996).Google Scholar
[10] Risbud, S. H., Liu, L., and Shackelford, J. F.. Appl. Phys. Lett. 63, 1648 (1993).Google Scholar