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Optical Detection of SiN Stress Layer Induced Carrier Mobility Enhancement in Silicon

Published online by Cambridge University Press:  01 February 2011

Frank Wirbeleit ,
Victoria Pedrero ,
Dominik Thron ,
Rolf Stephan  and
Udo Schwalke
Frank Wirbeleit
Affiliation:
[email protected], Advanced Micro Devices (AMD), Technology Department, Wilschdorfer Landstrasse 101, Dresden, 01109, Germany, +49 351 277 4527, +49 351 277 94527
Victoria Pedrero
Affiliation:
[email protected], Technische Universität Darmstadt, Institute of Semiconductor Technolog & Nanoelectronics, Darmstadt, 64289, Germany
Dominik Thron
Affiliation:
[email protected], Advanced Micro Devices (AMD), Technology Department, Wilschdorfer Landstrasse 101, Dresden, 01109, Germany
Rolf Stephan
Affiliation:
[email protected], Advanced Micro Devices (AMD), Technology Department, Wilschdorfer Landstrasse 101, Dresden, 01109, Germany
Udo Schwalke
Affiliation:
[email protected], Technische Universität Darmstadt, Institute of Semiconductor Technolog & Nanoelectronics, Darmstadt, 64289, Germany
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Abstract

Strain engineering is key element for improving MOSFET device performance in today's advanced high performance microelectronics. Strained SiN layers are well established in this regard to generate near surface strain effects for carrier mobility enhancement. Non destructive detection of effects from strain layers has not been resolved yet, especially during the processing of patterned wafers. Since optical reflective measurements are well established for non destructive thickness measurements in semiconductor manufacturing, the signals out of those spectra can be used to investigate stress induced carrier mobility enhancement effects, as shown in this work. This provides direct access to the effectiveness of the applied near surface strain to the carrier mobility. By this novel method, SiN films at different stress levels and under different process conditions are investigated on silicon bulk wafers. On these wafers, the optically detected spectra shift, known as plasmon shift, can be correlated with standard wafer bow stress measurement results. These results are correlated to the electrical performance of microelectronic test structures. Based on this, the relative variation of the stress levels of SiN films after different process treatments, and the impact on carrier mobility in microelectronic devices is shown.

Keywords

stress/strain relationshipplasma-enhanced CVD (PECVD) (deposition)optical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I03-11
Copyright
Copyright © Materials Research Society 2008

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References

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