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Optical Characterization of Si Nanowires: Dependence with Substrate Orientation and Light Polarization

Published online by Cambridge University Press:  21 July 2014

Juan A. Badán ,
Ricardo E. Marotti ,
Enrique A. Dalchiele ,
Daniel Ariosa ,
Francisco Martín ,
Dietmar Leinen  and
José R. Ramos-Barrado
Juan A. Badán
Affiliation:
Instituto de Física & CINQUIFIMA, Facultad de Ingeniería, Universidad de la República, Julio H. Reissig 565, CC 30, CP 11000, Montevideo, Uruguay.
Ricardo E. Marotti
Affiliation:
Instituto de Física & CINQUIFIMA, Facultad de Ingeniería, Universidad de la República, Julio H. Reissig 565, CC 30, CP 11000, Montevideo, Uruguay.
Enrique A. Dalchiele
Affiliation:
Instituto de Física & CINQUIFIMA, Facultad de Ingeniería, Universidad de la República, Julio H. Reissig 565, CC 30, CP 11000, Montevideo, Uruguay.
Daniel Ariosa
Affiliation:
Instituto de Física & CINQUIFIMA, Facultad de Ingeniería, Universidad de la República, Julio H. Reissig 565, CC 30, CP 11000, Montevideo, Uruguay.
Francisco Martín
Affiliation:
Lab. de Materiales y Superficies (Unidad Asociada al CSIC), Dptos. de Física Aplicada & Ingeniería Química, Universidad de Málaga, Campus de Teatinos s/n, E29071 Málaga, Spain.
Dietmar Leinen
Affiliation:
Lab. de Materiales y Superficies (Unidad Asociada al CSIC), Dptos. de Física Aplicada & Ingeniería Química, Universidad de Málaga, Campus de Teatinos s/n, E29071 Málaga, Spain.
José R. Ramos-Barrado
Affiliation:
Lab. de Materiales y Superficies (Unidad Asociada al CSIC), Dptos. de Física Aplicada & Ingeniería Química, Universidad de Málaga, Campus de Teatinos s/n, E29071 Málaga, Spain.
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Abstract

Optical properties of Si nanowire arrays (SiNWs) prepared on p-doped Si(111) and Si(100) substrates are studied. The SiNWs were synthesized by self-assembly electroless metal deposition nanoelectrochemistry in an ionic silver HF solution through selective etching. Total reflectance (Rt) and total diffuse reflectance (Rdt) of SiNWs change drastically in comparison to polished Si. To understand these changes diffuse reflectance (Rd) with polarized incident light was studied. For samples prepared on Si(111), the wavelength integrated Rd (wIRd) shows maxima at certain angle of incidence θ and it does not depend on light polarization. Moreover, Rdt of SiNWs prepared on Si(111) can be modeled as an ensemble of diffuse reflectors. For samples prepared on Si(100) wIRd increases with θ, being greater when the light electric field is parallel to the plane of incidence. Also, Rd spectra show structures due to interference effects. For these reasons SiNWs prepared on Si(100) can be considered as a thin film whose refractive index depends on light polarization.

Keywords

Siopticalnanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1666: Symposium A – Film-Silicon Science and Technology , 2014 , mrss14-1666-a16-06
Copyright
Copyright © Materials Research Society 2014 

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