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Optical Band Gap Implications for Ferroelectric Memory Applications

Published online by Cambridge University Press:  15 February 2011

J.D. Klein  and
S.L. Clauson
J.D. Klein
Affiliation:
EIC Laboratories, Norwood, MA 02062
S.L. Clauson
Affiliation:
EIC Laboratories, Norwood, MA 02062
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Abstract

Metallic perovskite contact layers enable fatigue-resistant ferroelectric memory capacitors to be obtained. LaNiO3 films atop (100) LaAlO3 substrates exhibit metallic resistivity over a wide range of temperature and oxygen partial pressure. Subsequent deposition of PZT and LaNiO3 thin films atop LaNiO3/LaAlO3 provides parallel-plate ferroelectric capacitor structures. However, the quality of the PZT thin films cannot be reliably indicated by conventional means such as x-ray diffraction. Optical properties of the PZT layers were examined to discern differences in otherwise similar films. The suitability of Au/LaNiO3/PZT/LaNiO3/LaAlO3 devices for nonvolatile memory applications was surveyed through pulsed voltage testing. Observed 1-second remanent polarization (PR [1 sec]) exceeded 35μC/cm2. Long-term memory was demonstrated for up to sixteen hours. No decrease in remanent polarization was apparent after more than 2 × 1010 switching cycles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 147
Copyright
Copyright © Materials Research Society 1995

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References

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