Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-03T01:50:54.760Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Absorption in Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

S. K. O'Leary ,
S. Zukotynski ,
J. M. Perz  and
L. S. Sidhu
S. K. O'Leary
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
S. Zukotynski
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
J. M. Perz
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
L. S. Sidhu
Affiliation:
Department of Electrical and Computer Engineering University of Toronto, Toronto, Ontario, Canada M5S 3G4
Get access

Abstract

The role that disorder plays in shaping the form of the optical absorption spectrum of hydrogenated amorphous silicon is investigated. Disorder leads to a redistribution of states, which both reduces the ‘Tauc’ gap and broadens the absorption tail. The observed relationship between the ‘Tauc’ gap and the breadth of the absorption tail is thus explained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 545
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Cody, G. D., in Hydrogenated Amorphous Silicon, Vol.21B of Semiconductors and Semimetals, edited by Pankove, J. I. ( Academic, New York, 1984 ), p. 11.Google Scholar
[2] Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline Materials, 2nd ed. ( Clarendon, Oxford, 1979 ).Google Scholar
[3] Cody, G. D., Tiedje, T., Abeles, B., Brooks, B., and Goldstein, Y., Phys. Rev. Lett. 47, 1480 ( 1981 ).Google Scholar
[4] Cody, G. D., J. Non-Cryst. Solids 141, 3 ( 1992 ).Google Scholar
[5] O'Leary, S. K., Zukotynski, S., and Perz, J. M., Phys. Rev. B. 51, 4143 (1995 ).Google Scholar
[6] O'Leary, S. K., Zukotynski, S., and Perz, J. M., Phys. Rev. B 52, 7795 (1995 ).Google Scholar
[7] Jackson, W. B., Kelso, S. M., Tsai, C. C., Allen, J. W., and Oh, S. -J., Phys. Rev. B 31, 5187 ( 1985 ).Google Scholar
[8] Tauc, J., Grigorovici, R., and Vancu, A.. Phys. Stat. Sol. 15, 627 ( 1966 ).Google Scholar
[9] Tauc, J., in Amorphous and Liquid Semiconductors, edited by Tauc, J. ( Plenum, New York, 1974 ), p. 159.Google Scholar
[10] Sze, S. M., Physics of Semiconductor Devices, 2nd. ed. ( Wiley, New York, 1981 ).Google Scholar
[11] Spicer, W. E. and Donovan, T. M, Phys. Rev. Lett. 24, 595 ( 1970 ).Google Scholar
[12] Singh, J., Phys. Rev. B 23, 4156 ( 1981 ).Google Scholar