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On thon the Photoemission from Quantum Confined Strained III–V Systems

Published online by Cambridge University Press:  15 February 2011

Kamakhya P. Ghatak ,
B. Nag  and
G. Mazumder
Kamakhya P. Ghatak
Affiliation:
Department of Electronic Science, University of Calcutta, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta–700009, INDIA
B. Nag
Affiliation:
Department of Applied Physics, University College of Science and Technology, 92, Acharya Prafulla Chandra Road, Calcutta–700009, INDIA
G. Mazumder
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta–700032, INDIA
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Abstract

In this paper we have studied the photoemission from quantum wells (QW), quantum wells wires (QWWs) and quantum dots (QDs) of quantum confined strained III–V compounds on the basis of a newly formulated electron dispersion law. It is found taking such quantum confined Hg1–xCdxTe and In1–xGaxAsyP1–y lattice matched InP as examples that the photoemission increases with increasing energy of the incident photons in a ladder like manner and also exhibits oscillatory dependences with changing electron concentration and film thickness respectively for all types quantum confinement. The photoemitted current is greatest in strained QDs and least in unstrained QWs. In addition the theoretical results are in agreement with the experimental datas as given elsewhere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 85
Copyright
Copyright © Materials Research Society 1995

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References

[1] Ghatak, K.P., Biswas, S. N., Proc. SPIE 1626, 115–125 (1992); K.P. Ghatak, B. Proc. of MRS 224, 55-62 (1991).Google Scholar
[2] Bir, G.F., Picus, G.E., Symmetry and Strain Induced Effects in Semiconductors, Cambridge University Press, 1994.Google Scholar
[3] Ghstak, K. P., Mitra, B., Phys. Scripta 42, 103 (1990).Google Scholar
[4] Blakemore, J.S., Semiconductor Statistics, Dover Publications, USA, 1987.Google Scholar
[5] Ghatak, K.P., Bjswas, S.N., J. Appl. Phys. 70, 4309 (1991).Google Scholar
[6] Popapov, A.L., and Srima, A.. nov, Soy. Phys. Semicond., 100, 210 (1993).Google Scholar