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On the Role of Interfacial Defect Sites During Solid Phase Epitaxial Regrowth of Implantation Amorphized Silicon

Published online by Cambridge University Press:  26 February 2011

W. O. Adekoya ,
M. Hage-Ali ,
J. C. Muller  and
P. Siffert
W. O. Adekoya
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UA du CNRS n'292) F-67037 STRASBOURG CEDEX (France)
M. Hage-Ali
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UA du CNRS n'292) F-67037 STRASBOURG CEDEX (France)
J. C. Muller
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UA du CNRS n'292) F-67037 STRASBOURG CEDEX (France)
P. Siffert
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UA du CNRS n'292) F-67037 STRASBOURG CEDEX (France)
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Abstract

We have studied the solid phase epitaxial regrowth (SPER) of implantation (31P+11B+ (73Ge+ preamorphized)) amorphized silicon in the temperature range 500–600°C induced by Rapid Thermal Annealing (RTA) using Rutherford Backscattering and channeling measurements (RBS). Our results show rate enhancements (≃ 3.5–6.5) of the velocities of regrowth in all studied cases with respect to literature-reported values for furnace-induced SPER. Also, the ratio VB/VP (velocity of regrowth in the presence of boron with respect to phosphorus) gives a value of approximately 3 in both RTA and furnace-induced kinetics. These results are explained by a model which takes into account the role of electrically-active interfacial defect sites during SPER.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 447
Copyright
Copyright © Materials Research Society 1988

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References

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