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On the Electrical and Photoluminescence Properties of Erbium Doped ZnO Thin Film

Published online by Cambridge University Press:  12 June 2012

Liang-Chiun Chao ,
Chung-Chi Liau  and
Wan-Chun Chang
Liang-Chiun Chao
Affiliation:
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan 106.
Chung-Chi Liau
Affiliation:
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan 106.
Wan-Chun Chang
Affiliation:
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan 106.
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Abstract

Er doped ZnO (Er:ZnO) thin films with Er concentration from 0.1 to 3.6 at. % were prepared by dual beam ion beam sputter deposition at room temperature. Experimental results show that as Er concentration increases from 0.1 to 1.1 at. %, the resistivity of the as-deposited Er:ZnO film decreases from 560 Ω·cm to a minimum of 0.23 Ω·cm, while further increasing Er concentration to 3.6 at. % results in increase of the resistivity to 4.2 kΩ·cm. The as-deposited Er:ZnO with Er concentration of 1.1 at.% also exhibits the highest carrier concentration of 2.3×1019 cm-3. None of the as-deposited Er:ZnO films show 1.5 μm emission without post-growth annealing. Er:ZnO film with Er concentration at 0.5~1.1 at.% shows the strongest 1.5 μm emission after annealing at 700 ~ 900°C, while all the Er:ZnO film becomes semi-insulating after annealing. The discrepancy between the processing conditions for optimized carrier concentration and optimized optically activated Er ions may due to the formation of the pseudo-octahedral structure after annealing that favors the 1.5 μm emission.

Keywords

ion-beam processingErHall effect
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1471: Symposium YY – Rare-Earth-Based Materials , 2012 , mrss12-1471-yy04-05
Copyright
Copyright © Materials Research Society 2012

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