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On the Argon Annealing-Based Improvements of the Properties of Ultra-Thin Oxynitrides Nitrided with NH3

Published online by Cambridge University Press:  01 February 2011

Anindya Dasgupta ,
Christos G. Takoudis  and
Greg Martel
Anindya Dasgupta
Affiliation:
Department of Chemical Engineering, University of Illinois at Chicago 810 South Clinton Street, Chicago, Illinois 60607
Christos G. Takoudis
Affiliation:
Department of Chemical Engineering, University of Illinois at Chicago 810 South Clinton Street, Chicago, Illinois 60607
Greg Martel
Affiliation:
SemiTest, Inc., 43 Manning Road, Billerica, MA 01821
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Abstract

Thermally grown Si3N4 films in NH3 are known to have a higher dielectric constant and a higher N concentration than silicon oxynitrides, although they incorporate hydrogen atoms that induce hot electron carriers during subsequent high temperature processing. Further, a silicon nitride is difficult to grow over about 6 nm thick, due to self-limiting growth. One alternative is SiOxNy post-nitrided with NH3.

In this work, we study the scope of improvement of Ar annealed nitrided oxynitrides as a function of annealing temperature and duration. Secondary ion mass spectroscopy (SIMS) studies of the nitrogen and hydrogen profiles suggest increasing N and H removal with increasing annealing time and temperature. Electrical characterizations have been performed to determine the total charge (Qox) and interface trap (Dit) densities at different processing conditions, before and after the annealing step. Post-annealing steps are not found to yield improvements of the electrical properties of these dielectric films. Instead, sometimes Qox is even seen to increase (e.g., after a 30 min Ar anneal at 1000 °C). Therefore, an optimization of such annealing steps is essential in designing nanodielectrics with desired nitrogen amounts and N concentration profiles as well as in understanding related process-structure-function relationships.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B4.10
Copyright
Copyright © Materials Research Society 2002

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References

1. Dang, Sanjit Singh and Takoudis, Christos G, J. Appl. Phys, 86,1326 (1999)Google Scholar
2. Green, M.L., Gusev, E.P., Lu, H.L., Garfunkel, E., Gustafsson, T., Lennard, W.N., and Bransen, D., Electrochem. Soc. Meet. Abst. 98-1,330 (1998)Google Scholar
3. Gusev, E.P., Lu, H.L., Garfunkel, E., Gustafsson, T., Green, M.L., Lennard, W.N., and Bransen, D., J. Appl. Phys, 84,2980 (1998)Google Scholar
4. Okada, Y., Tobin, P.J., Lakhotia, V., Feil, W.A., Ajuria, S.A., and Hedge, R.I., Appl. Phys.Lett. 194, 194 (1993)Google Scholar
5. Ellis, K.A. and Buhrman, R.A., Appl. Phys. Lett. 1696, 1696 (1996)Google Scholar
6. Bhat, M., Han, L.K., Wristers, D., Yan, J., Kwong, D.L., and Fulford, J., Appl. Phys. Lett. 1225, 1225 (1995)Google Scholar
7. Ajuria, S.A., Fitch, J.T., Workman, D., and Mele, T.C., J. Electrochem. Soc. 140, p. L113 (1993)Google Scholar
8. Kohn, C.M. and Goldfarb, W.C., Solid St. Tech., June (1995)Google Scholar