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Ohmic and rectifying contacts to n-SiC formed by energetic deposition of carbon

Published online by Cambridge University Press:  10 June 2014

Masturina Kracica ,
Jim G. Partridge ,
Dougal G. McCulloch ,
Patrick W. Leech ,
Anthony S. Holland  and
Geoff K. Reeves
Masturina Kracica
Affiliation:
School of Applied Sciences, RMIT University, GPO Box 2476V, Melbourne Vic 3001
Jim G. Partridge
Affiliation:
School of Applied Sciences, RMIT University, GPO Box 2476V, Melbourne Vic 3001
Dougal G. McCulloch
Affiliation:
School of Applied Sciences, RMIT University, GPO Box 2476V, Melbourne Vic 3001
Patrick W. Leech
Affiliation:
School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne Vic 3001
Anthony S. Holland
Affiliation:
School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne Vic 3001
Geoff K. Reeves
Affiliation:
School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne Vic 3001
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Abstract

Energetically-deposited carbon contacts to n-type 6H-SiC have exhibited either insulating, rectifying or ohmic electrical characteristics depending on the average energy of the depositing flux and the substrate temperature. Deposition at room temperature and at a low-medium average energy (<500 eV) has resulted in carbon with a low graphitic content and insulating electrical contacts. With higher average energy and at a moderately elevated temperature (∼100 °C), the higher graphitic content contacts were rectifying with an ideality factor, η, of ∼1.8 and barrier height of ∼0.88 eV. Oriented graphitic carbon deposited at 200 °C with biases exceeding 300 V formed ohmic contacts.

Keywords

Cmicrostructuretransmission electron microscopy (TEM)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014 , mrss14-1693-dd06-10
Copyright
Copyright © Materials Research Society 2014 

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