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Occurrence of Ground and Excited-State Impurity Bands in Silicon Inversion Layers: Electric Field Effects

Published online by Cambridge University Press:  22 February 2011

O. HipÓlito ,
Salviano A. LeÃO  and
A. Ferreira Da Silva
O. HipÓlito
Affiliation:
Departamento de Física e Ciência dos Materiais, Instituto de Física e Química de São Carlos, Universidade de São Paulo, 13560-250 São Carlos, SP, Brazil
Salviano A. LeÃO
Affiliation:
Departamento de Física e Ciência dos Materiais, Instituto de Física e Química de São Carlos, Universidade de São Paulo, 13560-250 São Carlos, SP, Brazil
A. Ferreira Da Silva
Affiliation:
Laboratório Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, Caixa Postal 515, 12225-000 São José dos Campos, SP, Brazil
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Abstract

We investigate the effects of charged impurities in n-type Silicon inversion layers. We show the occurrence of ground and excited-state impurity bands as a function of electric field and concentration. Also the effects of disorder and for given impurity concentrations, the lowest excited band play an essential role in the optical and transport measurements. For high electric fields the impurity bands go to the ideally 2D separated bands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 183
Copyright
Copyright © Materials Research Society 1994

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References

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