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Observation of Superheating of Si at the Si/SiO2 Interface in Pulsed-laser irradiated Si Thin Films

Published online by Cambridge University Press:  28 July 2015

J.J. Wang ,
A.B. Limanov ,
Ying Wang  and
James S. Im
J.J. Wang
Affiliation:
Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
A.B. Limanov
Affiliation:
Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
Ying Wang
Affiliation:
Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
James S. Im
Affiliation:
Materials Science and Engineering, Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA
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Abstract

Substantial superheating of single-crystal Si films at and near the bottom Si/SiO2 interface was observed. This was accomplished via back-side irradiation of a (100) single-crystal Si film on a quartz substrate using an excimer-laser pulse. The spatiotemporal details of the melting transition were tracked in situ using surface-side and substrate-side transient reflectance measurements, and the one-dimensional thermal profile evolution within the solid film during the heating period was numerically computed using the experimentally extracted temporal profile of the incident beam and temperature-dependent optical and thermal parameters of the materials. A simple lower-bound estimation identifies that superheating in excess of 100 K was attained within Si along the bottom (100)-Si/SiO2 interface even at moderate beam energy densities.

Keywords

laser annealingSithin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1770: Symposium A – Emerging Silicon Science and Technology , 2015 , pp. 43 - 48
Copyright
Copyright © Materials Research Society 2015 

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References

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