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Observation and Characterization of the Pseudomorphic to Stable Phase Transitions of Fe1-xSi on Si(111)

Published online by Cambridge University Press:  25 February 2011

N. Onda ,
H. Sirringhaus ,
S. Goncalves-Conto ,
C. Schwarz ,
E. Muller-Gubler  and
H. Von Kanel
N. Onda
Affiliation:
Laboratorium fur Festkorperphysik, Eidgenossische Technische Hochschule Zurich, 8093 Zurich, Switzerland
H. Sirringhaus
Affiliation:
Laboratorium fur Festkorperphysik, Eidgenossische Technische Hochschule Zurich, 8093 Zurich, Switzerland
S. Goncalves-Conto
Affiliation:
Laboratorium fur Festkorperphysik, Eidgenossische Technische Hochschule Zurich, 8093 Zurich, Switzerland
C. Schwarz
Affiliation:
Laboratorium fur Festkorperphysik, Eidgenossische Technische Hochschule Zurich, 8093 Zurich, Switzerland
E. Muller-Gubler
Affiliation:
Laboratorium fur Festkorperphysik, Eidgenossische Technische Hochschule Zurich, 8093 Zurich, Switzerland
H. Von Kanel
Affiliation:
Laboratorium fur Festkorperphysik, Eidgenossische Technische Hochschule Zurich, 8093 Zurich, Switzerland
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Abstract

Pseudomorphic Fe1-x Si films have been grown on Si(111) by molecular beam epitaxy (MBE) at room temperature (RT). Structural investigations revealed that the phase crystallizes in the cubic CsCl structure with a lattice constant close to half that of Si. Upon annealing, films thicker than 15Å undergo a phase transition to the stable bulk ε-FeSi, either in epitaxial or in polycrystalline form at temperatures around 300°C. Thinner films do not transform to the ε-FeSi phase. Instead they exhibit a continuous increase of the Si content up to the stoichiometry of FeSi2 The CsCl symmetry persists, exept for prolonged annealing close to the transition to βFeSi2, where γ-FeSi2 (CaF2 ) forms as an intermediate phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 581
Copyright
Copyright © Materials Research Society 1993

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References

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