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N+/P and P+/N Junctions in Strained Si on Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure

Published online by Cambridge University Press:  01 February 2011

G. Eneman ,
E. Simoen ,
R. Delhougne ,
P. Verheyen ,
M. Ries ,
R. Loo ,
M. Caymax ,
W. Vandervorst  and
K. De Meyer
G. Eneman
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium K.U. Leuven, ESAT-INSYS, 3001 Leuven, Belgium Research assistant of The Fund for Scientific Research – Flanders (Belgium)
E. Simoen
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium
R. Delhougne
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium
P. Verheyen
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium
M. Ries
Affiliation:
MEMC Electronic Materials, PO Box 8, 501 Pearl Drive, Saint Peters, MO, 63376, USA
R. Loo
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium
M. Caymax
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium
W. Vandervorst
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium K.U. Leuven, ESAT-INSYS, 3001 Leuven, Belgium
K. De Meyer
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium K.U. Leuven, ESAT-INSYS, 3001 Leuven, Belgium
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Abstract

The electrical performance of junctions in SiGe Strain Relaxed Buffers (SRB's) with a strained Si top layer is investigated. Most of the SRB's grown in this experiment use a thin C-doped SiGe layer, which allows to fabricate thin (∼250nm) SRB's with a high relaxation degree. The effects of Threading Dislocation Density (TDD) and C-rich layer depth on the electrical behaviour of n+/p and p+/n junctions are studied. The C atoms in the junction's Space Charge Region (SCR) give rise to defects and induce a noticeable increase in the leakage. The effect of the TDD on the leakage in n+/p junctions is linear over the complete voltage range applied, while for p+/n junctions, only a small effect on leakage is measured at V=1V reverse for TDD's below 1×107cm-2. For low reverse voltages, the current varies more linearly with TDD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E3.7
Copyright
Copyright © Materials Research Society 2005

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