Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T03:53:04.814Z Has data issue: false hasContentIssue false
  • English
  • Français

Novel Silicon-Elastomers for Advanced Soft Lithography

Published online by Cambridge University Press:  01 February 2011

Kyung Choi
Kyung Choi*
Affiliation:
[email protected], Bell Labs, Nanotechnology, 600-700 mauntain Ave, Murray Hill, NJ, 07974, United States
Get access

Abstract

High resolution pattern transfers in the nano-scale regime have been considerable challenges in ‘soft lithography’ to achieve nanodevices with enhanced performances. In this technology, the resolution of pattern integrations is significantly rely on the materials' properties of polydimethylsiloxane (PDMS) stamps. Since commercial PDMS stamps have shown limitations in nano-scale resolution soft lithography due to their low physical toughness and high thermal expansion coefficients, we developed stiffer, photocured PDMS silicon elastomers designed, specifically for nano-sized soft lithography and photopatternable nanofabrications.

Keywords

nanoscalepolymerchemical synthesis
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 947: Symposium A – Responsive Soft Matter – Chemistry and Physics for Assemblages, Films and Forms , 2006 , 0947-03-26
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. (a) Kim, E., Xia, Y. N., and Whitesides, G. M., J. Am. Chem. Soc. 118, 5722 (1996). (b) Y. N. Xia, J. A. Rogers, K. E. Paul, and G. M. Whitesides, Chem. Rev. 99, 1823 (1999).Google Scholar
2. (a) Blanchet, G. and Rogers, J. A., Journal of Imaging Science and Technology 47(4), 296 (2003). (b) C. J. Love, J. R. Anderson, and G. M. Whitesides, MRS Bulletin 26(7), 523 (2001).Google Scholar
3. (a) Choi, K. M. and Rogers, J. A., J. Am. Chem. Soc., 125, 4060 (2003). (b) V. Sundar, J. Zaumseil, V. Podzorov, E. Menard, R. L. Willett, T. Someya, M. E. Gershenson, E. Micheal, J. A. Rogers, Science 303, 1644 (2004).Google Scholar
4. Conrad, P. G., Nishmura, P. T., Aherne, D., Schwartz, B. J., Wu, D., Fang, N., Zhang, X., Roberts, J., Shea, K. J., Adv. Mater. 11, 5274 (2003).Google Scholar
5. Thorsen, T., Maerkl, S. J. and Quake, S. R., Science, 298, 580 (2002).Google Scholar
6. Duan, X., Niu, C., Sahi, V., Chen, J., Parce, J. W., Empedocles, S., Goldman, J. L., Nature 425, 274 (2003).Google Scholar
7. Wu, T., Mei, Y., Cabral, J., Xu, C., Beers, K. L., J. Am. Chem. Soc. 126, 9880 (2004).Google Scholar
8. Kobayashi, J., Mori, Y., Okamoto, K., Akiyama, R., Ueno, M., Kitamori, T., Kobayashi, S., Science 304, 1305 (2004).Google Scholar
9. Haswell, S. J., Middleton, R. J., O?Sullivan, B., Skelton, V., Watts, P., Styring, P., Chem. Commun. (2001).Google Scholar