Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-28T05:06:38.845Z Has data issue: false hasContentIssue false
  • English
  • Français

Novel SiC detector based on optical signal instead of electrical signal

Published online by Cambridge University Press:  10 June 2014

Geunsik Lim ,
Tariq Manzur  and
Aravinda Kar
Geunsik Lim
Affiliation:
CREOL, The College of Optics and Photonics, Laser-AdvancedMaterials Processing Laboratory, Departments of MAE and MSE, University of Central Florida, Orlando, Florida 32816-2700, U.S.A.
Tariq Manzur
Affiliation:
S&T Lead, I&EW, UnderseaWarfare Electromagnetic Systems Development, Building 1319, 1176 Howell Street, Newport, RI 02841-1708, U.S.A.
Aravinda Kar
Affiliation:
CREOL, The College of Optics and Photonics, Laser-AdvancedMaterials Processing Laboratory, Departments of MAE and MSE, University of Central Florida, Orlando, Florida 32816-2700, U.S.A.
Get access

Abstract

A novel SiC optical detector that produces optical signal in contrast to the electric signal generated by conventional electrical detectors. The optical detector is a remote sensor providing response to incident photons from a distant object. The incident photons modify the refractive index and, consequently, the reflectance of the doped SiC by altering the electron densities in the valence band and the acceptor energy levels. This variation in the refractive index or reflectance represents the optical signal as the sensor response, which can be determined with a probe laser such as a He-Ne laser or a light-emitting diode. The sensor can be applied to numerous remote sensing applications including high-temperature or harsh environments due to the optical read-out of the detector response with a probe laser. The effects of different dopants on the detector response for sensing different chemical species, or equivalently imaging in different MWIR wavelengths, have been studied and the dopant concentration has been found to affect the optical signal. These results indicate that a new class of SiC detectorsclassified as optical detectors can be produced for a variety of wavelengths using different dopants for numerous applications.

Keywords

sensordiffusionlaser
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014 , mrss14-1693-dd08-03
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Andersson, M., Pearce, R. and Spetz, A. L., Sensors and Actuators B: Chemical 179, 95 (2013).CrossRefGoogle Scholar
Darmastuti, Z., Bhattacharyya, P., Andersson, M., Kanungo, J., Basu, B., Ojamae, L., Spetz, A. L., Sensors and Actuators B: Chemical 187, 553 (2013).CrossRefGoogle Scholar
Bur, C., Reimann, P., Andersson, M., Lloyd Spetz, A., and Schütze, A., Microsystem Technologies 18, 1015 (2012).CrossRefGoogle Scholar
Zhang, Y., Zhang, D., Liu, C., J. Phys. Chem. B110, 4671 (2006).CrossRefGoogle Scholar
Wu, R., Yang, M., Lu, Y., Feng, Y., Huang, Z., Wu, Q., J. Phys. Chem. C112, 15985 (2008).Google Scholar
Egorov, A., Egorov, M., Chekhlova, T., Timakin, A., Quantum Electron. 38, 787 (2008).CrossRefGoogle Scholar
Setaro, A., Bismuto, A., Lettieri, S., Maddalena, P., Comini, E., Bianchi, S., Baratto, C., Sberveglieri, G., Sensors and Actuators B130, 391 (2008).CrossRefGoogle Scholar
Nam, H., Sasaki, T., Koshizaki, N., J. Phys. Chem. B110, 23081 (2006).CrossRefGoogle Scholar
Dakshinamurthy, S., Quick, N., Kar, A., J. Appl. Phys. 99, 94902 (2006).CrossRefGoogle Scholar
Dakshinamurthy, S., Quick, N., Kar, A., J. Phys. D: Appl. Phys. 40, 353 (2007).CrossRefGoogle Scholar
Chakravarty, A., Quick, N., Kar, A., J. Appl. Phys. 102, 73111 (2007).CrossRefGoogle Scholar
Lim, G., DeSilva, U. P., Quick, N. R. and Kar, A., Appl. Opt. 49, 1563 (2010).CrossRefGoogle Scholar
Lim, G., Manzur, T. and Kar, A., Appl. Opt. 50, 2640 (2011).CrossRefGoogle Scholar
Lebedev, A. A., Semiconductors 33, 107 (1999).CrossRefGoogle Scholar
Castro, A. J., Meneses, J., Briz, S., and Lopez, F., Rev. Sci. Instrum. 70, 3156 (1999).CrossRefGoogle Scholar
Willer, U., Saraji, M., Khorsandi, A., Geiser, P., and Schade, W., Optics and Lasers Eng. 44, 699 (2006).CrossRefGoogle Scholar
Herbin, H., Picque, N., Guelachvili, G., Sorokin, E., and Sorokina, I., J. Molecular Spectroscopy, 238, 256 (2006).CrossRefGoogle Scholar