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Novel Precursors for MOCVD of Thin Films of Metal Oxides Containing Early Transition Metals

Published online by Cambridge University Press:  10 February 2011

Hywel O. Davies ,
Kirsty A. Fleeting ,
Timothy J. Leedham ,
Anthony C. Jones ,
Paul O'Brien  and
David J. Otway
Hywel O. Davies
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AZ, UK
Kirsty A. Fleeting
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AZ, UK
Timothy J. Leedham
Affiliation:
Inorgtech Ltd., 25 James Carter Rd, Mildenhall, Suffolk, IP28 7DE, UK
Anthony C. Jones
Affiliation:
Inorgtech Ltd., 25 James Carter Rd, Mildenhall, Suffolk, IP28 7DE, UK Email: [email protected]
Paul O'Brien
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, Londonx, SW7 2AZ, UK Email: [email protected]
David J. Otway
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AZ, UK Email: [email protected]
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Abstract

MOCVD is a useful method for the deposition of thin films of metal oxides containing early transition metals, e.g., lead zirconium titanate, (PZT), because of its good step coverage and control of composition. Results are presented on a number of novel compounds which may be, or are, good MOCVD precursors. The compounds studied are in several general classes and include M(←diket)x, M(OR)x, M(←diket)x (OR)y [where M = Ti, Zr, Hf, Ta; ←-diket = tmhd (2,2,6,6-tetramethylheptane-3,5-dione), acac (acetylacetonate), hfac (1,1,1,5,5,5-hexafluoroacetylacetonate); R = Me, Et, Pr1, Butt]. We have sought to modify the precursors through chemical methods and have synthesized a number of novel, volatile, and intrinsically thermally stable MOCVD precursors. Full chemical characterization of the precursors (NMR, IR, MS, CHN, TGA/DSC, Single Crystal X-ray diffraction) has been undertaken.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 333
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Mat. Res. Soc. Symp. Proc., 335 (1994) and references therein.Google Scholar
2. Jones, A. C., Leedham, T. J., Wright, P., Crosbie, M. J., Lane, P. A., O'Brien, P. and Williams, D. J., Mat. Res. Soc. Symp. Proc., 485, p. 11(1998).Google Scholar
3. Desu, S. B., Shi, T. and Kwok, C. L., Mat. Res. Soc. Symp. Proc., 168, p.349(1990)Google Scholar
4. Pulver, M. and Wahl, G., Electrochem. Soc. Proc., 97, p. 960 (1997).Google Scholar
5. Gardiner, R. A., VanBuskirk, P. C. and Kirlin, P. S., Mat. Res. Soc. Symp. Proc., 335, p.221 (1994).Google Scholar
6. Tao, W., Desu, S. B., and Li, T. K., Mat. Lett., 23, p.177 (1995).Google Scholar
7. Jones, A. C., Leedham, T. J., Wright, P. J., Crosbie, M. J., Lane, P. A., Williams, D. J., Fleeting, K. A., Otway, D. J. and O'Brien, P., Adv. Mater. Chem. Vap. Dep., 4, p.46 (1998).Google Scholar
8. Jones, A. C., Leedham, T. J., Wright, P. J., Crosbie, M. J., Williams, D. J., Fleeting, K. A., Davies, H. O., Otway, D. J. and O'Brien, P., Adv. Mater. Chem. Vap. Dep., 41, p.197 (1998).Google Scholar
9. Jones, A. C., Leedham, T. J., Wright, P. J., Crosbie, M. J., Fleeting, K. A., Otway, D. J., O'Brien, P. and Pemble, M. E., J. Mater. Chem., 8, p.177 (1998).Google Scholar
10. Fleeting, K. A., Jones, A. C., Leedham, T., Malik, M. A., O'Brien, P., and Otway, D. J., Mat. Res. Soc. Symp. Proc., 495, p.57 (1998).Google Scholar
11. Fleeting, K. A., O'Brien, P., Otway, D. J., White, A. J. P., Williams, D. J. and Jones, A. C., Inorg. Chem., accepted for publication (1998).Google Scholar
12. Baxter, I., Drake, S. R., Hursthouse, M. B., Malik, K. M. A., Mingos, D. M. P., Plakatouras, J. C. and Otway, D. J., Polyhedron, 17, p. 625 (1998).Google Scholar
13. Fleeting, K. A., Jones, A. C., O'Brien, P., Otway, D. J., White, A. J. P., Williams, D. J. and Jones, A. C., Eur. J. Inorg. Chem., submitted for publication (1998).Google Scholar
14. Zaima, S., Furuta, T., Yasuda, Y. and lida, M., J. Electrochem. Soc., 137, p. 1297 (1990).Google Scholar
15. Davies, H. O., Jones, A. C., Leedham, T. J., O'Brien, P., Wright, P. J. and Crosbie, M. J., unpublished results.Google Scholar
16. Ami, T., Hironaka, K., Isobe, C., Nagel, N., Sugiyama, M., Ikeda, Y., Watanabe, K., Miura, K. and Tanaka, M., Mat. Res. Soc. Symp. Proc., 415, p. 195 (1996).Google Scholar
17. Davies, H. O., Jones, A. C., Leedham, T. J., O'Brien, P., White, A. J. P. and Williams, D. J., J. Mat. Chem., 8, p.2315 (1998).Google Scholar
18. Otway, D. J., Drake, S. R., Mingos, D. M. P., Plakatouras, J. C., unpublished results.Google Scholar