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Novel Noncontact Thickness Metrology for Partially Transparent and Nontransparent Wafers for Backend Semiconductor Manufacturing

Published online by Cambridge University Press:  26 February 2011

Wojciech J. Walecki ,
Vitali Souchkov ,
Kevin Lai ,
Phuc Van ,
Manuel Santos ,
Alexander Pravdivtsev ,
S. H. Lau  and
Ann Koo
Wojciech J. Walecki
Affiliation:
Frontier Semiconductor, 1631 North 1st Street, San Jose, CA 95112
Vitali Souchkov
Affiliation:
Frontier Semiconductor, 1631 North 1st Street, San Jose, CA 95112
Kevin Lai
Affiliation:
Frontier Semiconductor, 1631 North 1st Street, San Jose, CA 95112
Phuc Van
Affiliation:
Frontier Semiconductor, 1631 North 1st Street, San Jose, CA 95112
Manuel Santos
Affiliation:
Frontier Semiconductor, 1631 North 1st Street, San Jose, CA 95112
Alexander Pravdivtsev
Affiliation:
Frontier Semiconductor, 1631 North 1st Street, San Jose, CA 95112
S. H. Lau
Affiliation:
Frontier Semiconductor, 1631 North 1st Street, San Jose, CA 95112
Ann Koo
Affiliation:
Frontier Semiconductor, 1631 North 1st Street, San Jose, CA 95112
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Abstract

Single probe infrared low coherence optical interferometry has been proven to be an effective tool for characterization of thin and ultra-thin semiconductor Si and compound materials wafers. Its application was however limited to wafers transparent at probing wavelength, and having relatively smooth surfaces. Purpose of this paper is to present an extension of low coherence interferometry to characterization of non-transparent wafers, and wafers with rough surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B9.31
Copyright
Copyright © Materials Research Society 2005

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References

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