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A Novel MO Precursor for Metal Tantalum and Tantalum Nitride Film

Published online by Cambridge University Press:  01 February 2011

Kenichi Sekimoto ,
Taishi Furukawa ,
Noriaki Oshima ,
Ken-ichi Tada  and
Tetsu Yamakawa
Kenichi Sekimoto
Affiliation:
[email protected], Sagami Chemical Research Center, Intelligent Material Group, 2743-1 Hayakawa, Ayase, Kanagawa, 252-1193, Japan
Taishi Furukawa
Affiliation:
[email protected], Sagami Chemical Research Center, Intelligent Material Group, 2743-1,Hayakawa, Ayase, Kanagawa, 252-1193, Japan
Noriaki Oshima
Affiliation:
[email protected], TOSOH Corporation, Tokyo Research Center, 2743-1,Hayakawa, Ayase, Kanagawa, 252-1123, Japan
Ken-ichi Tada
Affiliation:
[email protected], Sagami Chemical Research Center, Intelligent Material Group, 2743-1,Hayakawa, Ayase, Kanagawa, 252-1193, Japan
Tetsu Yamakawa
Affiliation:
[email protected], Sagami Chemical Research Center, Intelligent Material Group, 2743-1,Hayakawa, Ayase, Kanagawa, 252-1193, Japan
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Abstract

A novel tantalum precursor, bis(ethylcyclopentadienyl)hydridocarbonyltantalum (Ta(EtCp)2(CO)H EtCp:ethylcyclopentadienyl), for chemical vapor deposition (CVD) and atomic layer deposition (ALD) was synthesized. The molecular structure of this precursor was determined by 1H and 13C NMR, IR, ICP-AES and elemental analysis. This precursor is liquid at room temperature, and its vapor pressure and decomposition temperature indicates that this precursor is suitable for CVD and ALD process.

The composition analysis of metal tantalum films deposited by thermal CVD revealed that the concentration of carbon was larger than tantalum. On the other hand, an argon plasma CVD technique reduced the carbon concentration drastically.

Keywords

Taorganometallicchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F09-03
Copyright
Copyright © Materials Research Society 2006

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References

1 Fix, R., Gordon, R. G. and Hoffman, D. M., Chem. Mater. 5, 614 (1993).Google Scholar
2 Tsai, M. H., Sun, S. C., Chiu, H. T., Tsai, C. E. and Chuang, S. H., Appl. Phys. Lettt. 67, 1128 (1995).Google Scholar
3 Tsai, M. H., Sun, S. C., Tsai, C. E., Chuang, S. H. and Chiu, H. T., Appl. Phys. 79, 6932 (1996).Google Scholar
4 Kaloyeros, A. E., Chen, X., Lane, S. and Frisch, H. L., J. Mater. Res. 15, 2800 (2000).Google Scholar
5 Green, M. L. H., McCleverty, J. A., Pratt, L. and Wilkinson, G., J. Chem. Soc. 4548 (1961)Google Scholar