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A Novel Direct Pulse Laser Deposited Nickel Silicide Ohmic Contact to n-SiC

Published online by Cambridge University Press:  21 March 2011

M. W. Cole ,
P. C. Joshi ,
C. W. Hubbard ,
E. Ngo ,
J. D. Demaree ,
J. K. Hirvonen ,
M. C. Wood  and
M. H. Ervin
M. W. Cole
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A.
P. C. Joshi
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A.
C. W. Hubbard
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A.
E. Ngo
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A.
J. D. Demaree
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A.
J. K. Hirvonen
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A.
M. C. Wood
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A.
M. H. Ervin
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate Aberdeen Proving Ground, MD 21005, U.S.A.
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Abstract

Pulsed laser direct deposit Ni2Si Ohmic contacts were successfully fabricated on n-SiC. The electrical, structural, compositional, and surface morphological properties were investigated as a function of heat treatments ranging from 700 °C to 950 °C. The as-deposited and 700 °C annealed samples were non-Ohmic. Annealing at 950 C° yielded excellent Ohmic behavior, an abrupt void free interface, and a smooth surface morphology. No residual carbon was present within the contact film or at the film-SiC interface and the contact showed no appreciable contact expansion as a result of the 950 °C annealing process. Results of this investigation demonstrate that 950 °C annealed pulse laser deposited Ni2Si-SiC contacts possess excellent electrical, interfacial, microstructural, and surface properties, which are required for reliable device operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H7.6
Copyright
Copyright © Materials Research Society 2001

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References

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