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Novel Chain Stack Capacitor for 32Mb FeRAM and Beyond

Published online by Cambridge University Press:  11 February 2011

R. Bruchhaus ,
T. Ozaki ,
U. Ellerkmann ,
J. Lian ,
Y. Kumura ,
H. Kanaya ,
M. Yabuki ,
T. Tsuchya ,
A. Hilliger  and
U. Egger
...Show all authors
R. Bruchhaus
Affiliation:
Infineon Technologies Japan K.K., Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
T. Ozaki
Affiliation:
Toshiba Corp. Semiconductor Company, Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
U. Ellerkmann
Affiliation:
Institut fuer Werkstoffe der Elektrotechnik II, RWTH Aachen, 52056 Aachen, Germany
J. Lian
Affiliation:
Infineon Technologies Japan K.K., Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
Y. Kumura
Affiliation:
Toshiba Corp. Semiconductor Company, Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
H. Kanaya
Affiliation:
Toshiba Corp. Semiconductor Company, Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
M. Yabuki
Affiliation:
Toshiba Corp. Semiconductor Company, Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
T. Tsuchya
Affiliation:
Toshiba Corp. Semiconductor Company, Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
A. Hilliger
Affiliation:
Infineon Technologies Japan K.K., Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
U. Egger
Affiliation:
Toshiba Corp. Semiconductor Company, Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
K. Tomioka
Affiliation:
Toshiba Corp. Semiconductor Company, Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
B. K. Moon
Affiliation:
Infineon Technologies Japan K.K., Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
H. Itokawa
Affiliation:
Toshiba Corp. Semiconductor Company, Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
H. Zhuang
Affiliation:
Infineon Technologies Japan K.K., Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
K. Natori
Affiliation:
Toshiba Corp. Semiconductor Company, Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
G. Beitel
Affiliation:
Infineon Technologies Japan K.K., Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
S. Sugimoto
Affiliation:
Toshiba Corp. Semiconductor Company, Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
K. Yamakawa
Affiliation:
Toshiba Corp. Semiconductor Company, Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
I. Kunishima
Affiliation:
Toshiba Corp. Semiconductor Company, Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
N. Nagel
Affiliation:
Infineon Technologies Japan K.K., Infineon Toshiba FeRAM Development Alliance (FDA), Toshiba Yokohama Complex, Shinsu-gita-cho, Isogo-ku, Yokohama, 235–8522, Japan
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Abstract

For high density FeRAM devices small cell sizes are essential. The combination of the capacitor on plug (COP) structure with the Chain FeRAM™ cell design is used to develop a 32Mb FeRAM. Based on a 0.2 μm standard CMOS process a silicide capped polysilicon plug is used to contact the bottom electrode of the ferroelectric capacitor to the transistor. The barrier contact to the plug is formed by IrO2/Ir and a sputter deposited PZT (40/60) is used as ferroelectric material. The function of SrRuO3 (SRO) layers at the electrode/PZT interfaces is described in more detail. Double sided SRO results in slightly lower coercive voltage and imprint behavior compared to capacitors without SRO. Double sided SRO is essential to achieve excellent fatigue behavior measured up to 1×1011 switching cycles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U1.1
Copyright
Copyright © Materials Research Society 2003

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References

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