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A Novel Bonding Technique Using Metal-Induced Crystallization of Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

Markus D. Ong  and
Reinhold H. Dauskardt
Markus D. Ong
Affiliation:
[email protected], Stanford University, Materials Science and Engineering, 1033 Crestview Dr Apt 216, Mountain View, CA, 94040, United States
Reinhold H. Dauskardt
Affiliation:
[email protected], Stanford University, Materials Science and Engineering, 416 Escondido Mall, Stanford, CA, 94305, United States
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Abstract

This study investigates the used of aluminum-induced crystallization of amorphous silicon is a potential bonding mechanism for a sandwich stack of films between two silicon substrates. Similar procedures using copper diffusion bonds have been in use, but these require temperatures as high as 400°C. Using the crystallization of amorphous silicon as the bonding mechanism has allowed the bonding temperature to be lowered by more than 100 K. Fracture experiments for a low-k material were conducted, and the results using amorphous silicon bonding was compared to epoxy bonding control experiments. Essentially identical results were obtained for the two bonding mechanisms. Low-temperature bonding techniques are of great interest to future progress in the microelectronics industry, and these results are promising advances.

Keywords

bondingthin filmSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A06-01
Copyright
Copyright © Materials Research Society 2007

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References

1 Niklaus, F., Stemme, G., Lu, J.Q., and Gutmann, R.J., Journal of Applied Physics, 99, 031101 (2006).Google Scholar
2 Spanggaard, H. and Krebs, F., Solar Energy Materials & Solar Cells, 83, 125 (2004).Google Scholar
3 Pan, C.T., Yang, H., Shen, S.C., Chou, M.C., and Chou, H.P., Journal of Micromechanics and Microengineering, 12, 611 (2002).Google Scholar
4 Chen, K.N., Tan, C.S., Fan, A., and Reif, R., Electrochemical and Solid-State Letters, 7 G14 (2004).Google Scholar
5 Guarini, K., Topol, A., Ieong, M., Yu, R., Shi, L., Singh, D., Cohen, G., Pogge, H., Purushothaman, S., and Haensch, W., in International Symposium on Thin Film Materials, Processes, and Reliability, PV2003-13, 390, ECS (2003).Google Scholar
6 Volksen, W., Cook, R., Furuta, P., Hawker, C., Hedrick, J.L., Liniger, E., Malek, R., Miller, D., Miller, R.D., Nguyen, C., Shon, D., Toney, M., Yoon, D.Y., Dielectrics for ULSI Multilevel Interconnection Conference, Tampa, FL (1999).Google Scholar
7 Konno, T.J. and Sinclair, R., Materials Science and Engineering, A179/A180, 426 (1994).Google Scholar
8 Wang, P.I., Karabacak, T., Li, H.F., Pethuraja, G.G., Lee, S.H., Liu, M.Z., Lu, J.Q., and Lu, T.M.: Low Temperature Copper-Nanorod Bonding for 3D Integration, in Enabling Technologies for 3-D Integration, edited by Bower, C.A., Garrou, P., Takahashi, K., Ramm, P., (Mater. Res. Soc. Symp. Proc. 970, Pittsburgh, PA, 2007) 0970-Y04-07.Google Scholar
9 Ong, M.D., Jousseaume, V., Maitrejean, S., and Dauskardt, R.H.: Fracture Properties of Porous MSSQ Films: Impact of Porogen Loading and Burnout, in Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects, edited by Tsui, Ting Y., Joo, Young-Chang, Michaelson, Lynne, Lane, Michael, Volinsky, Alex A. (Mater. Res. Soc. Symp. Proc. 914, Warrendale, PA, 2006), 0914-F04-07.Google Scholar
10 Dauskardt, R.H., Lane, M., Ma, Q., and Krishna, N., Engineering Fracture Mechanics, 61, 141 (1998).Google Scholar