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Nonstoichiometric Defects in Semiconductor SnTe Thin Films

Published online by Cambridge University Press:  26 February 2011

O. N. Nashchekina ,
E. I. Rogacheva ,
L. P. Shpakovskaya ,
V. I. Pinegin  and
A. I. Fedorenko
O. N. Nashchekina
Affiliation:
Polytechnical University, Department of Technical Physics 21 Frunze St., 310002 Kharkov, Ukraine
E. I. Rogacheva
Affiliation:
Polytechnical University, Department of Technical Physics 21 Frunze St., 310002 Kharkov, Ukraine
L. P. Shpakovskaya
Affiliation:
Polytechnical University, Department of Technical Physics 21 Frunze St., 310002 Kharkov, Ukraine
V. I. Pinegin
Affiliation:
Polytechnical University, Department of Technical Physics 21 Frunze St., 310002 Kharkov, Ukraine
A. I. Fedorenko
Affiliation:
Polytechnical University, Department of Technical Physics 21 Frunze St., 310002 Kharkov, Ukraine
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Abstract

The mono- and polycrystalline films of the SnTe1+x semiconducting phase with controlled content of nonstoichiometric defects (NSD) were grown by thermal evaporation and hot wall epitaxy methods from the charges of different composition. The concentration of NSD was determined using X-Ray diffraction method and the measurements of carrier density. The temperature dependences of electrical conductivity and Hall coefficient were obtained in the temperature range of 77 - 300 K. The best results were obtained for hot wall epitaxy method: the perfect monocrystalline films with NSD content corresponding to x =0-0,025 and high mobility of charge carriers were grown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 255
Copyright
Copyright © Materials Research Society 1995

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