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Nonlinear Optical Properties of Silicon Nanocrystallites: Effects of Passivation

Published online by Cambridge University Press:  28 February 2011

A.A. Seraphin ,
F.J. Aranda ,
E. Werwa ,
D.V.G.L.N. Rao  and
K.D. Kolenbrander
A.A. Seraphin
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
F.J. Aranda
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
E. Werwa
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
D.V.G.L.N. Rao
Affiliation:
Physics Department, University of Massachusetts at Boston, Boston, MA 02125
K.D. Kolenbrander
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Degenerate four-wave mixing with picosecond pulses at 532 nm has been used to study the third-order nonlinear optical susceptibility (x(3)) for a series of passivated thin films of silicon nanocrystallites. A pulsed laser ablation supersonic expansion source of isolated silicon nanocrystallites was used to deposit thin films onto inert substrates. These films were subsequently passivated using chemical etches or oxidation steps. We observe a strong dependence of the measured x(3) as a function of the degree of passivation, indicating the fundamental importance of the surface of the nanocrystallite in enabling the nonlinear optical behavior. Systems providing more complete passivation were found to have greatly enhanced X(3) behavior when compared to poorly passivated systems. Surface passivation is also shown to be critical to the visible photoluminescence behavior of the thin films, as poorly passivated nanocrystallites exhibit very weak light emission, while well passivated systems show efficient emission. In both cases, the passivation controls the recombination pathways of excited carriers and determines the material's optical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 205
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Brus, L., Appl. Phys. A A, 465 (1991).Google Scholar
2 Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
3 Chiu, L.A., Seraphin, A.A., and Kolenbrander, K.D., J. Electron. Mater. 23, 347 (1994).Google Scholar
4 Islam, M.N., Physics Today 47, 34 (1994).Google Scholar
5 Werwa, E., Seraphin, A.A., Chiu, L.A., Zhou, Chuxin, and Kolenbrander, K.D., Appl. Phys. Lett. 64, 1821 (1994).Google Scholar
6 Takagahara, T. and Takeda, K., Phys. Rev. B 46, 15578 (1992).Google Scholar
7 Boyd, R.W., Nonlinear Optics. (Academic Press, San Diego, 1992), p. 245.Google Scholar
8 Rao, D.V.G.L.N., Aranda, FJ., Roach, J.F., and Remy, D.E., Appl. Phys. Lett. 58, 1241 (1991).Google Scholar
9 Seraphin, A.A., Werwa, E., Chiu, L.A., and Kolenbrander, K.D. in Interface Control of Electrical. Chemical, and Mechanical Properties, edited by Murarka, S.P., et al. (Mater. Res. Soc. Proc. 318, Pittsburgh, PA, 1993) pp. 433–438.Google Scholar
10 Klimov, V.I., Dneprovskii, V.S., and Karvanskii, V.A., Appl. Phys. Lett. 64, 2691 (1994).Google Scholar
11 Matsumoto, T., Hasegawa, N., Tamaki, T., Ueda, K., Futagi, T., Mimura, H., and Kanemitsu, Y., Jpn. J. Appl. Phys. 33, L35 (1994).Google Scholar
12 Ngiam, S.-T., Jensen, K.F., and Kolenbrander, K.D., J. Appl. Phys. 76(12) (1994).Google Scholar