Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-28T08:43:07.970Z Has data issue: false hasContentIssue false

Non-destructive Detection and Visualization of Extended Defects in 4H-SiC Epilayers

Published online by Cambridge University Press:  01 February 2011

Gan Feng
Affiliation:
[email protected], Kyoto University, Department of Electronic Science and Engineering, Kyoto, Japan
Jun Suda
Affiliation:
[email protected], Kyoto University, Department of Electronic Science and Engineering, Kyoto, Japan
Tsunenobu Kimoto
Affiliation:
[email protected], Kyoto University, Department of Electronic Science and Engineering, Kyoto, Japan
Get access

Abstract

The extended defects, such as dislocations and in-grown stacking faults (IGSFs), in 4H-SiC epilayers have been detected and visualized by a non-destructive method, the micro photoluminescence (μ-PL) intensity mapping method, at room temperature. The one-to-one correspondence between the extended defects and the μ-PL mapping contrast has been successfully obtained. A threading dislocation corresponds to a dark circle with the reduced intensity in the μ-PL mapping image performed at 390 nm, while a basal plane dislocation dissociates into a single Shockley SF during the measurements. Three kinds of IGSFs have been identified in the samples. Each kind of IGSF shows the distinct PL emission located at 460 nm, 480 nm, and 500 nm, respectively. The shapes and distributions of IGSFs have also been profiled by μ-PL intensity mapping.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Matsunami, H. and Kimoto, T., Mater. Sci. Eng. R. 20, 125 (1997).Google Scholar
2 Huang, X. R., Black, D. R., Macrander, A. T., Maj, J., Chen, Y., and Dudley, M., Appl. Phys. Lett. 91, 231903 (2007).Google Scholar
3 Tsuchida, H., Kamata, I., Nagano, M., J. Cryst. Growth 306, 254 (2007).Google Scholar
4 Tajima, M., Higashi, E., Hayashi, T., Kinoshita, H., and Shiomi, H., Appl. Phys. Lett. 86, 061914 (2005).Google Scholar
5 Kimoto, T., Nakazawa, S., Hashimoto, K., and Matsunami, H., Appl. Phys. Lett. 79, 2761 (2001).Google Scholar
6 Feng, G., Suda, J., and Kimoto, T., Appl. Phys. Lett. 92, 221906 (2008).Google Scholar
7 Bai, S., Wagner, G., Shishkin, E., Choyke, W. J., Devaty, R. P., Zhang, M., Pirouz, P., and Kimoto, T., Mater. Sci. Forum 389, 589 (2002).Google Scholar
8 Hiyoshi, T. and Kimoto, T., Appl. Phys. Exp. 2, 091101 (2009).Google Scholar
9 Lendenmann, H., Bergman, J. P., Dahlquist, F., and Hallin, C., Mater. Sci. Forum 433–436, 901 (2003).Google Scholar
10 Ha, S., Mieszkowski, P., Skowronski, M., and Rowland, L. B., J. Cryst. Growth 244, 257 (2002).Google Scholar
11 Stahlbush, R. E., VanMil, B. L., Myers-Ward, R. L., Lew, K-K., Gaskill, D. K., and Eddy, C. R., Appl. Phys. Lett. 94, 041916 (2009).Google Scholar
12 Sridhara, S. G., Carlsson, F. H. C., Bergman, J. P., and Janzén, E., Appl. Phys. Lett. 79, 3944 (2001).Google Scholar
13 Fujiwara, H., Kimoto, T., Tojo, T., and Matsunami, H., Appl. Phys. Lett., 87, 051912 (2005).Google Scholar
14 Feng, G., Suda, J., and Kimoto, T., Appl. Phys. Lett. 94, 091910 (2009).Google Scholar