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Nitrogen and Silicon Defect Incorporation during Homoepitaxial CVD Diamond Growth on (111) Surfaces

Published online by Cambridge University Press:  23 March 2015

Samuel L. Moore  and
Yogesh K. Vohra
Samuel L. Moore
Affiliation:
Department of Physics, University of Alabama at Birmingham (UAB), 310 Campbell Hall, 1300 University Boulevard, AL 35294-1170, U.S.A.
Yogesh K. Vohra
Affiliation:
Department of Physics, University of Alabama at Birmingham (UAB), 310 Campbell Hall, 1300 University Boulevard, AL 35294-1170, U.S.A.
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Abstract

Chemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. Altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.

Keywords

chemical vapor deposition (CVD) (deposition)diamonddefects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1734: Symposium R – Diamond Electronics and Biotechnology—Fundamentals to Applications , 2015 , mrsf14-1734-r03-05
Copyright
Copyright © Materials Research Society 2015 

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References

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