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Nitride and Oxide Based Nanowires Grown by Plasma-Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Chito E Kendrick ,
Damian Carder ,
Pual Miller ,
Roger J. Reeves ,
Richard Tilley  and
Steven M. Durbin
Chito E Kendrick
Affiliation:
[email protected], The MacDiarmid Institute, Electrical and Computer Engineering, Electrical and Computer Engineering, University of Canterbury, Private Bag 4800, Christchurch, n.a., 8004, New Zealand, +64 3 364 2867 ext 7140, +64 3 364 2761
Damian Carder
Affiliation:
[email protected], University of Canterbury, Physics and Astronomy, Christchurch, n/a, 8004, New Zealand
Pual Miller
Affiliation:
[email protected], University of Canterbury, Physics and Astronomy, Christchurch, n/a, 8004, New Zealand
Roger J. Reeves
Affiliation:
[email protected], University of Canterbury, Physics and Astronomy, Christchurch, n/a, 8004, New Zealand
Richard Tilley
Affiliation:
[email protected], Victoria University of Wellington, School of Chemical and Physical Sciences, Wellington, n/a, 8001, New Zealand
Steven M. Durbin
Affiliation:
[email protected], University of Canterbury, Electrical and Computer Engineering, Christchurch, n/a, 8004, New Zealand
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Abstract

The growth of nanostructured material continues to attract attention for a number of applications, including highly sensitive gas sensors (due to the increased surface area), and photonic crystals (which require arrays of nanostructures). Even though nanostructures can be formed through self-assembly, they often do not possess the high crystal quality of those grown using vapour liquid solid (VLS) techniques; also, with VLS the feature size and placement can be easily controlled. To achieve VLS growth, however, several parameters have to be considered specific to the material of interest. In this study, we examine VLS growth of both InN (infrared) and ZnO (ultraviolet) nanostructures.

Keywords

nanostructuremolecular beam epitaxy (MBE)optical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 940: Symposium P – Semiconductor Nanowires – Fabrication, Physical Properties, and Applications , 2006 , 0940-P13-33
Copyright
Copyright © Materials Research Society 2006

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References

1 Tansley, T. L. and Foley, C. P., J. Appl. Phys., 59, 3241–3244, (1986).Google Scholar
2 Davydov, V. Y., Klochikhin, A. A., Seisyan, R. P., Emtsev, V. V., Ivanov, S. V., Bechstedt, F., Furthmuller, J., Harima, H., Mudryi, V., Aderhold, J., Semchinova, O., and Graul, J., Phys. Stat. Sol. (b), 229, R1–R3, (2002).Google Scholar
3 Wu, J., Walukiewicz, W., Yu, K. M., Ager, J. W., Haller, E. E., Lu, H., Schaff, W. J., Saito, Y., and Nanishi, Y., Appl. Phys. Lett., 80, 3967–3969, (2002).Google Scholar
4 Kendrick, C. E., Anderson, P. A., Kinsey, R. J., Kennedy, V. J., Markwitz, A., Asadov, A., Gao, W., Reeves, R. J., and Durbin, S. M., Phys. Stat. Sol. (c), 2, 2236–2239, (2005).Google Scholar
5 Chin, V. W. L., Tansley, T. L., and Ostochan, T., J. Appl. Phys., 75, 7365–7372, (1994).Google Scholar
6 Ozgur, U., Alivov, Y. I., Liu, C., Teke, A., Reshchikov, M. A., Dogan, S., Avrutin, V., Cho, S. J., and Morkoc, H., J. Appl. Phys., 98, (2005).Google Scholar
7 Wagner, R. S. and Ellis, W. C., Appl. Phys. Lett., 4, 89–90, (1964).Google Scholar
8 Banerjee, D., Rybczynski, J., Huang, J. Y., Wang, D. Z., Kempa, K., and Ren, Z. F., Appl. Phys. A., 80, 749–752, (2005).Google Scholar
9 Li, S. Y., Lee, C. Y., and Tseng, T. Y., J. Crys. Growth, 247, 357–362, (2003).Google Scholar
10 Pan, Z. W., Dai, S., Rouleau, C. M., and Lowndes, D. H., Angewandte Chemie, 44, 274–278, (2005).Google Scholar
11 Lan, Z. H., Wang, W. M., Sun, C. L., Shi, S. C., Hsu, C. W., Chen, T. T., Chen, K. H., Chen, C. C., Chen, Y. F., and Chen, L. C., J. Cryst. Growth, 269, 87–94, (2004).Google Scholar
12 Tang, T., Han, S., Jin, W., Liu, X. L., Li, C., Zhang, D. H., Zhou, C. W., Chen, B., Han, J., and Meyyapan, M., J. Mat. Res., 19, 423–426, (2004).Google Scholar
13 Dwir, B. and Deutscher, G., Phys. Rev. B., 40, 11880–11892, (1989).Google Scholar