Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-01-11T16:07:03.760Z Has data issue: false hasContentIssue false
  • English
  • Français

NiSi formation in the Ni(Ti) /SiO 2 /Si System

Published online by Cambridge University Press:  01 February 2011

R.T.P. Lee ,
D.Z. Chi  and
S.J. Chua
R.T.P. Lee
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore117602.
D.Z. Chi
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore117602.
S.J. Chua
Affiliation:
Institute of Materials Research and Engineering, 3 Research Link, Singapore117602.
Get access

Abstract

A NiSi silicide process employing a Ni(Ti) alloy has been investigated. It was experimentally demonstrated that a small amount of Ti in Ni could overcome the reaction-inhibiting effect of an interfacial oxide layer on Si. Ti in the deposited Nil film reacts with the interfacial oxide, yielding an altered oxide layer, which acts as a Ni-permeable diffusion membrane during silicidation. Good diode characteristics were obtained from p+/n silicided Ni(Ti)-diodes with an initial interfacial oxide. It is believed that the ability to form silicide effectively in the presence of a native oxide will greatly relieve constraints on processing conditions and significantly enhance manufacturing yield.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D7.8
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ohuguro, T., Nakamura, S., Koike, M., Morimoto, T. and Nishiyama, A., “Analysis of resistance behaviour in Ti and Ni salicide polysilicon films”, IEEE Trans Electron Devices, vol 41, p.2305, 1994 Google Scholar
[2] Deng, F., Johnson, R. A., Asbeck, P.M., Lau, S. S., Dubbleday, W. B., Hsiaoand, T. Woo, J., “Salicidation process using NiSi and its device application”, J. Appl. Phys, vol 81, p8047, 1994 Google Scholar
[3] Mukai, R., Ozawa, S., and Yagi, H., “Compatibility of NiSi in the self-aligned silicide process for deep submicrometer devices”, vol 270, p567, 1995 Google Scholar
[4] Ohguro, T., Nakamura, S., Morifuiji, E., Ono, M., Yoshitomi, T., Saito, M., Momose, H.S., and Iwai, H., “Nitrogen-doped nickel monosilicide technique for deep submicron CMOS salicide”, IEDM Technical Digest, p. 453, 1995 Google Scholar
[5] Kittl, Jorge A., “Salicides and alternative technologies:part 2”, Solid State Technology, august, p55, 1999 Google Scholar
[6] Lee, P.S., Mangelinck, D., Pey, K.L., Ding, J., Dai, J.Y.. Ho, C.S. and See, A., “On theNi-Si phase transformation with/without native oxide”, Microelectronic Engineering, vol 51-52, p.583, 2000 Google Scholar
[7] Ishiaka, Akitoshi and Shiraki, Yasuhiro, “Low temperature surface cleaning of silicon and its application to silicon MBE”, Electrochemical Science and Technology, vol 133 No 4, p666–671, 1986 Google Scholar
[8] Tung, R.T., Gibson, J.M. and Poate, J.M., “Formation of ultrathin single-crystal silicide films on Si: surface and interfacial stabilization of Si-NiSi2 epitaxial structures”, Physical Review Letters, vol 50, p.429–432, 1983 Google Scholar