Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-28T07:09:37.275Z Has data issue: false hasContentIssue false
  • English
  • Français

New Paramagnetic Center and High Conductivity in a-Si1-xRux:H Thin Films

Published online by Cambridge University Press:  19 November 2013

Jian He ,
Wei Li ,
Rui Xu ,
An-ran Guo ,
Yin Wang  and
Ya-dong Jiang
Jian He
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Wei Li*
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Rui Xu
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
An-ran Guo
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Yin Wang
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Ya-dong Jiang
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
*
*E-mail: [email protected]
Get access

Abstract

In this work, the metallic element Ru is introduced into a-Si:H. The structural and electrical properties of the films doped with Ru have been investigated. Raman spectra reveal that the addition of Ru disarranges further the intrinsically disordered amorphous network and generates more coordinated defects. Meanwhile, a new paramagnetic signal, associated with the holes localized in valence band tail, has been observed. Moreover, the conductivity increases by about nine orders of magnitude with the increase of doping concentration, and the temperature coefficient of resistance (TCR) results show that this material may have a potential application in the infrared detectors.

Keywords

defectsSihigh conductivity
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1617: Symposium 7E – Low-Dimensional Semiconductor Structures , 2013 , pp. 57 - 62
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Mandelkorn, J., Schwartz, L., Broder, J., Kautz, H. and Ulman, R.: J. Appl. Phys. 35, 2258 (1964).CrossRefGoogle Scholar
Sclar, N.: Infrared Phys. 17, 71 (1977).CrossRefGoogle Scholar
Klimovsky, E., Sturiale, A. and Rubinelli, F. A.: Thin Solid Films 515, 4826 (2007).CrossRefGoogle Scholar
Knipp, D., Street, R. A., Stiebig, H., Krause, M., Lu, J. P., Ready, S. and Ho, J.: IEEE Trans. Electron. Dev. 53, 1551 (2006).CrossRefGoogle Scholar
Flewitt, A. J., Lin, S., Milne, W. I., Wehrspohn, R. B. and Powell, M. J.: J. Non-Cryst. Solids 352, 1700 (2006).CrossRefGoogle Scholar
Castilho, J. H., Chambouleyron, I., Marques, F. C., Rettori, C. and Alvarez, F.: Phys. Rev. B 43, 8946 (1991).CrossRefGoogle Scholar
Kumeda, M., Jinno, Y., Watanabe, I. and Shimizu, T.: Solid State Commun. 23, 833 (1977).Google Scholar
Shimizu, T., Kumeda, M., Watanabe, I. and Jinno, Y.: J. Non-Cryst. Solids 35, 36 (1980).Google Scholar
Damayanti, M., Sritharan, T., Mhaisalkar, S. G. and Gan, Z. H.: Appl. Phys. Lett. 88, 044101 (2006).CrossRefGoogle Scholar
Madey, T. E., Faradzhev, N. S., Yakshinskiy, B. V. and Edwards, N. V.: Appl. Surf. Sci. 253, 1691 (2006).CrossRefGoogle Scholar
Matsui, Y., Nakamura, Y., Shimamoto, Y. and Hiratani, M.: Thin Solid Films 437, 51 (2003).CrossRefGoogle Scholar
Saito, Y., Azechi, T., Kitamura, T., Hasegawa, Y., Wada, Y. and Yanagida, S.: Coordin. Chem. Rev. 248, 1469 (2004).CrossRefGoogle Scholar
Wei, W. S., Xu, G. Y., Wang, J.L. and Wang, T. M.: Vacuum 81, 656 (2007).CrossRefGoogle Scholar
Marinov, M. and Zotov, N.: Phys. Rev. B 55, 2938 (1997).CrossRefGoogle Scholar
Zotov, N., Marinov, M., Mousseau, N. and Barkema, G.: J. Phys. : Condens. Matter. 11, 9647 (1999).Google Scholar
Murphy, D., Ray, M., Wyles, R., Asbrock, J., Lum, N., Kennedy, A., Wyles, J., Hewitt, C., Graham, G., Horikiri, T., Anderson, J., Bradley, D., Chin, R. and Kostrzewa, T.: Pro. of SPIE 4454, 147 (2001)CrossRefGoogle Scholar
Ajmera, S. K., Syllaios, A. J., Tyber, G. S., Taylor, M. F. and Hollingsworth, R. E.: Proc. of SPIE 7660, 766012 (2010).CrossRefGoogle Scholar
Stuzmann, M., Biegelsen, D. K. and Street, R. A.: Phys. Rev. B 35, 5566 (1987).Google Scholar
Hasegawa, S., Kasajima, T. and Shimizu, T.: Philos. Mag. B 43, 149 (1981).CrossRefGoogle Scholar