Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-12-01T00:15:10.094Z Has data issue: false hasContentIssue false

Nanotribological Improvements due to Surface Chemistry Modification

Published online by Cambridge University Press:  10 February 2011

M. Scherge
Affiliation:
Technische Universität Ilmenau, Institut f. Physik, D-98684 Ilmenau, GERMANY
X. Li
Affiliation:
Technische Universität Ilmenau, Institut f. Physik, D-98684 Ilmenau, GERMANY
J A. Schaefer
Affiliation:
Technische Universität Ilmenau, Institut f. Physik, D-98684 Ilmenau, GERMANY
Get access

Abstract

Nanotribological improvements concerning adhesion and friction can be obtained by chemical modification of the sample surface. Due to adsorption a thin water film is always present. However, the thickness of the fim can be reduced or temporarily suppressed by hydrofluoric (HF) acid etching, leading to hydrophobic surface conditions for the case of silicon. Using a novel micro/nano tribo-tester capable of probing two planar samples in contact, adhesion and friction forces in the range of mN down to nN can be resolved using force-distance mode or tangential force mode, respectively. It can be shown that the reduction of the water layer reduces the adhesion effectively. The tangential force measurements, however, indicate strong stick/slip events. Those stick/slips were not observed with samples having a thicker water film. The thickness of the water film controls the type of sliding. As the thickness decreases stick/slips appear and vanish. This phenomenon is attributed to the formation of ordered layers. Experimental results will be presented for silicon samples (A = 3 mm2). The surface chemistry was monitored using Auger Electron Spectroscopy. Topography was measured by Atomic Force Microscope (AFM).

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Takahagi, T., Ishitani, A., Kuroda, H., J. Appl. Phys., 64(1988), p. 14.Google Scholar
[2] Takahagi, T., Ishitani, A., Kuroda, H., Nagasawa, Y, Ito, H., Wako, S., J. Appl. Phys., 68(1990), p. 2187.Google Scholar
[3] Sakuraba, M., Murota, J., Ono, S., J. Appl. Phys., 75(1994), p. 3701.Google Scholar
[4] Y Chabal, J., J. Vac. Sci. Technol., A 3(1985), p.1448.Google Scholar
[5] Binggeli, M., Mate, C. M., J. Vac. Sci. Technol. B, 13(1995)3, p. 1313.Google Scholar
[6] Scherge, M., Schaefer, J. A., Tribology Letters 4(1998), p. 37.Google Scholar
[7] Scherge, M., Schaefer, J. A., Kluwer Academic Publishers, 1998.Google Scholar
[8] Scherge, M., Biichner, H., Jdiger, G., Schaefer, J. A., Journal of Optics, 2(1998), p. 1.Google Scholar
[9] Kluth, G. J., Maboudian, R., J. Appl. Phys., 80(1996), p. 5408.Google Scholar
[10] Andersohn, L., Koehler, U., Surface Science, 284(1993), p. 77.Google Scholar
[11] Reiter, G., Demirel, A. L., Granick, S., Science, 263(1994), p. 1741.Google Scholar
[12] Demirel, A. L., Granick, S., Phys. Rev. Lett, 77, (1996), p. 2261.Google Scholar
[13] Persson, B. N. J., Chem. Phys. Lett., 254(1996), p. 114.Google Scholar