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Nanostructures with Group IV Nanocrystals Obtained by LPCVD and Thermal Annealing of SiGeO Layers

Published online by Cambridge University Press:  01 February 2011

Bruno Morana ,
Andrés Rodríguez ,
Jesús Sangrador ,
Tomás Rodríguez ,
Óscar Martínez ,
Juan Jiménez  and
Andreas Kling
Bruno Morana
Affiliation:
[email protected], Universidad Politécnica de Madrid, E.T.S.I.T., Tecnología Electrónica, Madrid, 28040, Spain
Andrés Rodríguez
Affiliation:
[email protected], Universidad Politécnica de Madrid, Tecnología Electrónica, Ciudad Universitaria s/n, Madrid, 28040, Spain
Jesús Sangrador
Affiliation:
[email protected], Universidad Politécnica de Madrid, E.T.S.I.T., Tecnología Electrónica, Madrid, 28040, Spain
Tomás Rodríguez
Affiliation:
[email protected], Universidad Politécnica de Madrid, E.T.S.I.T., Tecnología Electrónica, Madrid, 28040, Spain
Óscar Martínez
Affiliation:
[email protected], U. de Valladolid, E.T.S.I.I., Física de la Materia Condensada, Valladolid, 47011, Spain
Juan Jiménez
Affiliation:
[email protected], U. de Valladolid, E.T.S.I.I., Física de la Materia Condensada, Valladolid, 47011, Spain
Andreas Kling
Affiliation:
[email protected], Universidade de Lisboa, Centro de Física Nuclear, Lisbon, 1649-003, Portugal
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Abstract

Nanocrystals embedded in an oxide matrix have been fabricated by annealing SiGeO films deposited by LPCVD. The composition of the oxide layers and its evolution after annealing as well as the presence and nature of nanocrystals in the films have been studied by several experimental techniques. The results are analyzed and discussed in terms of the main deposition parameters and the annealing temperature.

Keywords

nanostructurechemical vapor deposition (CVD) (deposition)oxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A07-02
Copyright
Copyright © Materials Research Society 2008

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References

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