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Nanostructured Zinc Oxide Piezoelectric Energy Generators Based on Semiconductor P-N Junctions

Published online by Cambridge University Press:  11 July 2012

Joe Briscoe
Affiliation:
Centre for Materials Research, School of Engineering and Materials Science, Queen Mary University of London, E1 4NS, UK.
Mark Stewart
Affiliation:
National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK.
Melvin Vopson
Affiliation:
National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK.
Markys Cain
Affiliation:
National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK.
Paul M. Weaver
Affiliation:
National Physical Laboratory, Hampton Road, Teddington TW11 0LW, UK.
Steve Dunn*
Affiliation:
Centre for Materials Research, School of Engineering and Materials Science, Queen Mary University of London, E1 4NS, UK.
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Abstract

ZnO nanorods grown on plastic substrates by chemical methods are combined with both inorganic and organic p-type materials to make flexible p-n junction devices. When bent the devices generate both voltage and current peaks, which is attributed to the piezoelectric effect in the ZnO nanorods. The best device produces a maximum possible power density of 100 nWcm‑2. When vibrated at a constant frequency the voltage output by the devices scales linearly with vibration amplitude. Also, when illuminated the output of the devices drops. These effects are consistent with a piezoelectric source of the voltage.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

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