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Nanometer Resolution XANES Imaging of Individual PC-RAM Devices

Published online by Cambridge University Press:  12 July 2012

Jan H. Richter ,
Milos Krbal ,
Alexander V. Kolobov ,
Paul Fons ,
Xiaomin Wang ,
Kirill V. Mitrofanov ,
Robert E. Simpson ,
Junji Tominaga ,
Hitoshi Osawa  and
Motohiro Suzuki
Jan H. Richter
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan
Milos Krbal
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan
Alexander V. Kolobov
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan SPring-8, Japan Synchrotron Radiation Institute (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
Paul Fons
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan SPring-8, Japan Synchrotron Radiation Institute (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
Xiaomin Wang
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan
Kirill V. Mitrofanov
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan
Robert E. Simpson
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan
Junji Tominaga
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan Collaborative Research Team Green Nanoelectronics Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, 305-8562, Ibaraki, Japan
Hitoshi Osawa
Affiliation:
SPring-8, Japan Synchrotron Radiation Institute (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
Motohiro Suzuki
Affiliation:
SPring-8, Japan Synchrotron Radiation Institute (JASRI), Kouto 1-1-1, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
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Abstract

We introduce a technique to permit x-ray absorption spectroscopy studies focusing on individual phase-change (Ge2Sb2Te5) memory cells in fully integrated PC-RAM structures. Devices were investigated employing an x-ray nanobeam of only about 300 nm diameter, which could be fully contained within the spatial extent of the active area within a single device cell and enabled us to investigate individual devices without interference from non-switching material surrounding the area of interest. By monitoring the fluorescence signals of tungsten and germanium at a photon energy corresponding to the Ge K-edge absorption edge white line position, we were successful in producing 2D area maps of the active cell region, which clearly show the imbedded tungsten heater element and the switched region of the phase change material. Additionally, position dependent changes in the phase change material could be traced by taking an array of XANES spectra at the Ge K-edge on and in the vicinity of individual devices.

Keywords

x-ray fluorescencememoryphase transformation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1431: Symposium F – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2012 , mrss12-1431-f09-04
Copyright
Copyright © Materials Research Society 2012

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References

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