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Nano-Crystalline Silicon Thin Film Transistors on PET Substrates Using a Hydrogenation-assisted Metal-induced Crystallization Technique

Published online by Cambridge University Press:  01 February 2011

Ashkan Behnam ,
Saber Haji ,
Farshid Karbassian ,
Shams Mohajerzadeh ,
Aida Ebrahimi ,
Yaser Abdi  and
Michael D Robertson
Saber Haji
Affiliation:
[email protected], Thin Film Laboratory, Department of Electrical and Computer Eng, University of Tehran, Tehran, Tehran, 14395/515, Iran
Farshid Karbassian
Affiliation:
[email protected], Thin Film Laboratory, Department of Electrical and Computer Eng, University of Tehran,, Tehran, Tehran, 14395/515, Iran
Shams Mohajerzadeh
Affiliation:
[email protected], Thin Film Laboratory, Department of Electrical and Computer Eng, University of Tehran, Tehran, Tehran, 14395/515, Iran
Aida Ebrahimi
Affiliation:
[email protected], Thin Film Laboratory, Department of Electrical and Computer Eng, University of Tehran,, Tehran, Tehran, 14395/515, Iran
Yaser Abdi
Affiliation:
[email protected], Thin Film Laboratory, Department of Electrical and Computer Eng, University of Tehran, Tehran, Tehran, 14395/515, Iran
Michael D Robertson
Affiliation:
[email protected], Department of Physics, Acadia University, Wolfville, NS, B4P 2R6, Canada
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Abstract

The effects of RF-Plasma hydrogenation and applied mechanical strain on the crystallization of silicon layers deposited on plastic substrates have been investigated where the maximum temperature remained below 170 °C for the entire process. The structural properties of the samples have been studied by optical, scanning-electron and transmission-electron microscopies where the nano-crystallinity of the silicon layers has been confirmed. The maximum average diameter of the silicon grains was 4.5 nm and occurred for an applied tensile strain of 4 %. In addition, a thin-film transistor on a plastic substrate has been fabricated and found to possess an electron mobility of 2.4 cm2/Vs.

Keywords

crystallinehydrogenationstress/strain relationship
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A18-06
Copyright
Copyright © Materials Research Society 2006

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References

references

[1] Yamamoto, K, Suzuki, T, Yoshimi, M, Nakajima, A. 25th IEEE Photovoltaic Specialists Conference; 13-17 May 1996: 661–664.Google Scholar
[2] Tung, YJ, Carey, PM, Smith, PM, Theiss, SD, Meng, X, Weiss, R, Davis, GA, Aebi, V, King, TJ. 56th Device Research Conference Digest; 22-24 June 1998: 102–103.Google Scholar
[3] Fischer, D, Dubail, S, Selvan, JA, Vaucher, NP, Platz, R, Hof, C, Kroll, N. Proc. 25th IEEE Photovoltaic Specialists Conference, Washington DC; 13–17 May 1996: 1053.Google Scholar
[4] Matsuyama, T, Terada, N, Baba, T, Sawada, T, Tsuge, S, Wakisaka, S, Tsuda, S. J. Non Crystalline Solids 1996; 198–200: 940.Google Scholar
[5] Noguchi, T., Tang, A. J., Tsai, J., Reif, R., IEEE Transactions on Electron Devices, v 43, no. 9, 1996, 1454–1458.Google Scholar
[6] Noguchi, T., Tang, A. J., Reif, R., Proceedings of MRS, v 403, Polycrystalline Thin Films: Structure, Texture, Properties, and Applications II, 1996, 357–362.Google Scholar
[7] Dimova-Malinovska, D, Angelov, O, Sendova-Vassileva, M, Grigorov, V, Pivin, JC. 27th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress; Vol. 3, 13-16, May 2004, 530–534.Google Scholar
[8] Hazra, S, Sakata, A, Yamanaka, M, Suzuki, E., App. Phy. Lett. 2002; 80: 4115–4117.Google Scholar
[9] Hashemi, P, Derakhshandeh, J, Mohajerzadeh, S, Robertson, M, Tonita, A., Vacuum Science and Technology A 2004; 22: 966–970.Google Scholar
[10] Shahrjerdi, D, Hekmatshoar, B, Mohajerzadeh, S, Khakifirooz, A and Robertson, M. Journal of Electronic Materials, 33, 2004: 353–357.Google Scholar
[11] Hekmatshoar, B, Mohajerzadeh, S, Shahrjerdi, D and Robertson, MD. Appl. Phys. Lett., 85, 2004: 1054–1056.Google Scholar